IGBT junction temperature prediction method based on improved ABC-SVR

An ABC-SVR, prediction method technology, applied in instruments, artificial life, computing, etc., can solve the problems of multi-parameter being easily affected by load, low junction temperature prediction accuracy, etc.

Active Publication Date: 2019-11-22
HEFEI UNIV OF TECH
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Problems solved by technology

[0006] The problem to be solved by the present invention is to overcome the shortcomings of the existing IGBT thermal parameter method, such as low junction temperature prediction accuracy, need to extract multiple parameters, and be easily affected by the load, and provide an optimized support vector regression machine based o

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  • IGBT junction temperature prediction method based on improved ABC-SVR
  • IGBT junction temperature prediction method based on improved ABC-SVR
  • IGBT junction temperature prediction method based on improved ABC-SVR

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Embodiment Construction

[0040] The present invention will be further explained below. The method for IGBT junction temperature prediction based on the improved artificial bee colony algorithm to optimize the support vector regression machine as described above is:

[0041] Step 1: Collect multiple groups (at least 50 groups) of IGBT junction temperature and junction temperature related electrical parameters as a sample data set. The junction temperature related electrical parameters include saturation voltage drop U CE And saturation current I CE , The format of the sample data in the sample data set is (U CE , I CE , T), with saturation pressure drop U CE And saturation current I CE As the sample input, take the IGBT junction temperature T as the sample output; divide the data in the sample data set of step 1 into two randomly, use one of the data as the training sample and the other as the test sample;

[0042] Step 2: Improve the formula for searching nectar sources in the artificial bee colony algorithm...

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Abstract

Disclosed is an IGBT junction temperature prediction method based on improved ABC-SVR which comprises the steps of collecting multiple sets of IGBT junction temperature and junction temperature related electrical parameters to serve as a sample data set; improving a formula for searching a nectar source in an artificial bee colony algorithm; optimizing the parameter combination of the support vector regression machine by using an improved artificial bee colony algorithm according to the formula for searching the nectar source to obtain the optimal parameter combination of the IGBT junction temperature prediction support vector regression machine model optimized based on the improved artificial bee colony algorithm; establishing an optimal IGBT junction temperature prediction support vectorregression machine model according to the optimal parameter combination; carrying out training and accuracy judgment on the established optimal IGBT junction temperature prediction support vector regression machine model; and predicting the junction temperature by using the optimal IGBT junction temperature prediction support vector regression machine model. The method has the advantages of few required parameters, simplicity in implementation and high prediction precision, and can be widely applied to application occasions with high IGBT junction temperature measurement difficulty and high required precision.

Description

Technical field [0001] The invention relates to an insulated bipolar transistor (IGBT) junction temperature prediction method based on an improved artificial bee colony algorithm optimization support vector regression machine (ABC-SVR), which is mainly used in the technical field of power IGBT reliability. Background technique [0002] Insulated bipolar transistor (IGBT) combines the advantages of field effect transistor (MOSFET) and bipolar transistor (BJT). It has the characteristics of simple drive, low loss and high voltage resistance. It is used in the fields of new energy, aerospace, and transportation. Has been widely used, the reliability of IGBT has also received increasing attention. [0003] As an important parameter of IGBT reliability, junction temperature has an important impact on the performance of devices and devices: too high a junction temperature will cause semiconductor devices to fail; at the same time, excessive temperature fluctuations will also cause excess...

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Application Information

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IPC IPC(8): G06F17/50G06N3/00
CPCG06N3/006
Inventor 何怡刚刘嘉诚何鎏璐袁伟博阮义
Owner HEFEI UNIV OF TECH
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