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Thermal activation delayed fluorescence organic light-emitting device

An electroluminescent device and luminescent technology, applied in the field of semiconductors, can solve problems such as high exciton utilization rate and high fluorescence radiation efficiency, device efficiency roll-off, small radiation transition rate, etc., to improve stability and reduce concentration , the effect of reducing the chance of quenching

Active Publication Date: 2019-11-22
JIANGSU SUNERA TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (1) For thermally activated delayed fluorescent materials, the smaller the triplet and singlet energy difference has the smaller the radiative transition rate, it is difficult to have both high exciton utilization and high fluorescence radiation efficiency;
[0007] (2) Even if doped devices have been used to reduce the T exciton concentration quenching effect, most TADF material devices are severely quenched at high current densities due to excessive exciton concentration, resulting in serious device efficiency roll-off at high current densities

Method used

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  • Thermal activation delayed fluorescence organic light-emitting device
  • Thermal activation delayed fluorescence organic light-emitting device
  • Thermal activation delayed fluorescence organic light-emitting device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] The structure of the organic electroluminescent device prepared in Example 1 is as follows: figure 2 As shown, the specific preparation process of the device is as follows:

[0073] Clean the ITO anode layer 2 on the transparent glass substrate layer 1, ultrasonically clean it with deionized water, acetone, and ethanol for 15 minutes each, and then treat it in a plasma cleaner for 2 minutes; dry the ITO glass substrate and place it in a vacuum In the cavity, the vacuum degree is less than 2*10 -6 Torr, on the ITO anode layer 2, evaporate 10nm thick HAT-CN, this layer is used as hole injection layer 3; then evaporate 80nm HT1, this layer is used as hole transport layer 4, and then evaporate 20nm thick EB1 , this layer is used as an electron blocking layer 5; further, a luminescent layer 6 of 30nm is evaporated: the selection of the host material and the dopant material are shown in Table 1, and the rate is controlled by a film thickness meter; on the luminescent layer ...

Embodiment 2～60

[0075] Examples 2-60 The methods for preparing organic electroluminescent devices are similar to those of Example 1, and the specific materials used are shown in Table 1.

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Abstract

The present invention relates to a thermal activation delayed fluorescence organic light-emitting device. The device comprises a light emitting layer comprising at least one first organic compound andat least one second organic compound as the subject materials and a phosphorescent compound or a fluorescent compound as an object material. The organic light-emitting device provided by the invention has the advantages of high light-emitting efficiency and low roll-off efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an organic electroluminescent device. Background technique [0002] Organic electroluminescent devices based on thermally activated delayed fluorescent materials have become a research and development hotspot due to their low difficulty in material synthesis, no need for noble metals, and high purity of luminescent colors. They are considered to have great application potential in the field of next-generation flat panel displays. has received widespread attention in recent years. [0003] The basic structure of an organic electroluminescent device includes opposing cathodes and anodes, and a light-emitting layer sandwiched between the cathodes and anodes. Usually, in order to obtain higher device performance, the light-emitting layer generally requires host materials to be doped with guest materials to obtain more efficient energy transfer efficiency and fully utilize the...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/11H10K2101/40H10K50/12H10K85/615H10K85/6572H10K2101/90H10K2101/20H10K85/654H10K85/657H10K71/00
Inventor 李崇赵鑫栋张兆超叶中华
Owner JIANGSU SUNERA TECH CO LTD
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