Bubble defect detection method and system for wafer bonding process

Abstract

The invention provides a bubble defect detection method and system for a wafer bonding process and a manufacturing method of a semiconductor device. The bubble defect detection method for the wafer bonding process comprises the following steps: providing an upper wafer and a lower wafer, wherein the upper wafer and the lower wafer are bonded to form a wafer bonding structure; thinning the upper wafer and / or the lower wafer; and selecting the detection light with appropriate wavelength to penetrate through the thinned upper wafer and / or lower wafer and detecting whether there is a bubble defectin the bonding interface of the wafer bonding structure by selecting a detection lens with an appropriate magnification and / or depth of field, wherein the imaging focal plane of the detection lens under the detection light covers the bonding interface of the wafer bonding structure. According to the technical scheme, the bubble defect on the bonding interface of the wafer bonding structure can bequickly and accurately detected after the thinning process, thus avoiding the abnormality of batch products and further improving the product yield.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a bubble defect detection method and system in a wafer bonding process and a semiconductor device manufacturing method. Background technique [0002] Wafer bonding has become a key technology for the integrated development and practical application of semiconductor manufacturing technology. Wafer bonding refers to bonding two flat wafers face to face, and applying certain external conditions such as pressure, temperature, voltage, etc., to generate atomic or intermolecular bonding at the interface between the original two wafers. , such as covalent bonds, metal bonds, molecular bonds, etc., so that the bonding between the two surfaces can reach a certain strength, so that the two wafers can be integrated. [0003] However, in the wafer bonding process, due to the particles remaining on the surface or the gas generated during wafer bonding cannot be released i...

AI Technical Summary

Problems solved by technology

However, the detection rate of ultrasonic detection technology is very slow. Generally, it takes about 10 minutes to detect a bonded wafer, which cannot be used for batch detection. The batch size of the circle is abnormal; and the ultrasonic detection technology is only applicable before the thinning process, because the upper surface of the bonded wafer after the thinning process is too close to the bonding interface, and the ultrasonic wave cannot distinguish the upper surface of the bonded wafer from the bonding interface. Reflected signal at bonding interface, resulting in non-detection of air bubbles

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