Semiconductor process method and structure

Abstract

The present disclosure is generally related to semiconductor devices, and more particularly to a dielectric material formed in semiconductor devices. The present disclosure provides methods for forming a dielectric material layer by a cyclic spin-on coating process. The application provides a semiconductor process method and structure. In an embodiment, a method of forming a dielectric material ona substrate includes spin-coating a first portion of a dielectric material on a substrate, curing the first portion of the dielectric material on the substrate, spin-coating a second portion of the dielectric material on the substrate, and thermal annealing the dielectric material to form an annealed dielectric material on the substrate.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor devices, and more particularly, to dielectric materials formed in semiconductor devices. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in integrated circuit materials and design have created generations of integrated circuits, with each generation having smaller and more complex circuits than the previous generation. In the process of integrated circuit development, functional density (functional density, such as: the number of interconnection devices per unit chip area) has generally increased, while geometry size (geometry size, such as: the smallest element (or wire) that can be formed using a process )) shrinks. This downscaling process often brings the benefits of increased production efficiency and lower associated costs. However, downscaling also presents challenges not present in previous genera...

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Problems solved by technology

However, downscaling also presents challenges not present in previous larger-sized generations

Inaccurate and inadequate control of the deposition and annealing processes in the fabrication of dielectric materials can detrimentally degrade the electrical performance of device structures

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