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A kind of preparation method of one-step chemical vapor deposition lead-free all-inorganic perovskite film

A chemical vapor deposition, inorganic calcium technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of low perovskite purity and low controllability, and achieve good repeatability and simple process. , high-quality effects

Active Publication Date: 2022-05-03
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] So far, the synthesis of lead-free all-inorganic perovskites usually uses a solution method and a two-step chemical vapor deposition method, but since two steps are usually required to deposit the raw materials for the synthesis of perovskites, the purity of the synthesized perovskites is not high. less controllable
The synthesis of lead-free all-inorganic perovskite thin films by one-step chemical vapor deposition has not been reported so far

Method used

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  • A kind of preparation method of one-step chemical vapor deposition lead-free all-inorganic perovskite film
  • A kind of preparation method of one-step chemical vapor deposition lead-free all-inorganic perovskite film
  • A kind of preparation method of one-step chemical vapor deposition lead-free all-inorganic perovskite film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1) Put cesium bromide and tin bromide powder into quartz boats according to the same molar ratio of 0.1mol:0.1mol, and then put the quartz boats into a tube furnace with a diameter of 20mm and a length of 1000mm. In the high temperature zone of the glass tube;

[0030] 2) The single crystal silicon substrate was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 15 minutes, then dried in a drying oven, and placed on a semicircular base, where the inclination angle of the base was 45 degrees, Place the base in the low temperature area downstream of the quartz tube;

[0031] 3) After sealing the tube furnace, flow a high-purity inert gas with a flow rate of 400 sccm for 5 minutes, then adjust the flow rate of the high-purity inert gas to 200 sccm, and start the heating program.

[0032] 4) Raise the high temperature zone from room temperature to 860°C in 90 minutes and keep it for 5 minutes; then raise the temperature in the low temperature zone ...

Embodiment 2

[0037] 1) Put cesium bromide and tin bromide powder into quartz boats according to the same molar ratio of 0.1mol:0.1mol, and then put the quartz boats into a tube furnace with a diameter of 20mm and a length of 430mm. In the high temperature zone of the glass tube;

[0038] 2) The single crystal silicon substrate was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 15 minutes, then dried in a drying oven, and placed on a semicircular base, where the inclination angle of the base was 90 degrees, Place the base in the low temperature area downstream of the quartz tube;

[0039] 3) After sealing the tube furnace, flow a high-purity inert gas with a flow rate of 400 sccm for 5 minutes, then adjust the flow rate of the high-purity inert gas to 300 sccm, and start the heating program.

[0040] 4) Raise the high temperature zone from room temperature to 600°C in 90 minutes and keep it for 5 minutes; then raise the temperature in the low temperature zone f...

Embodiment 3

[0042] 1) Put cesium bromide and tin bromide powder into quartz boats according to the same molar ratio of 0.1mol:0.1mol, and then put the quartz boats into a tube furnace with a diameter of 20mm and a length of 1000mm. In the high temperature zone of the glass tube;

[0043] 2) The single crystal silicon substrate was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 15 minutes, then dried in a drying oven, and placed on a semicircular base, where the inclination angle of the base was 45 degrees, Place the base in the low temperature area downstream of the quartz tube;

[0044]3) After sealing the tube furnace, flow a high-purity inert gas with a flow rate of 400 sccm for 5 minutes, then adjust the flow rate of the high-purity inert gas to 200 sccm, and start the heating program.

[0045] 4) The high temperature zone is raised from room temperature to 900°C within 90 minutes and kept for 5 minutes; then the low temperature zone is raised from room t...

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Abstract

The invention discloses a method for synthesizing a lead-free all-inorganic perovskite film by using a one-step chemical vapor deposition method. The steps of the method are as follows: respectively place cesium bromide and tin bromide powders in a quartz boat according to the same molar ratio, Place the quartz boat containing the powder in the upstream high temperature zone of the dual temperature zone tubular heating furnace; control the temperature, sublimate the powder to a vapor state in an argon atmosphere, and pass the high-purity carrier gas argon to the silicon wafer substrate in the low temperature zone Deposition on top; after the deposition is completed, heat in a low temperature area to obtain high-quality lead-free all-inorganic perovskite films. The lead-free all-inorganic perovskite thin film prepared by the invention has high crystal quality, no impurity phase and large size, simple process and good repeatability, and is especially suitable for preparing semiconductor devices based on the perovskite thin film in batches.

Description

technical field [0001] The invention belongs to the field of perovskite technology, in particular to a one-step chemical vapor deposition lead-free all-inorganic perovskite CsSnBr 3 The method of film preparation. Background technique [0002] In recent years, due to the unique crystal structure and electrical properties, halide perovskites have shown great application prospects in the field of semiconductor devices, such as solar cells, photodetectors, light-emitting diodes, and resistive memory. At present, common halide perovskites mainly include organic-inorganic hybrid titanium and all-inorganic perovskites. [0003] Since 2012, organic-inorganic hybrid titanium ore, as a material in semiconductor devices, has attracted the attention of researchers. However, due to the existence of unstable inorganic groups, the material of this system is easily affected by oxygen and water molecules in the air, and the crystal structure changes, which greatly affects the performance ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/0237H01L21/02521H01L21/0262
Inventor 王红军朱媛媛程鹏伟熊锐刘雍
Owner SHAANXI UNIV OF SCI & TECH