Ground sapphire substrate slice boron carbide cleaning method
A technology of sapphire substrate and boron carbide, applied in the direction of cleaning methods using liquids, cleaning methods and utensils, chemical instruments and methods, etc.
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[0025] A method for cleaning after boron carbide grinding of sapphire substrate, the specific steps are as follows:
[0026] (1) Insert the 4-inch wafer (400 pieces) ground by boron carbide into the cassette, soak in 18M pure water, and wait for cleaning.
[0027] (2) Ultrasonic removal of boron carbide particles attached to the wafer surface with pure water: put the wafer cassette into a stainless steel tank of pure water at 60°C, and take it out after ultrasonic cleaning for 10 minutes (ultrasonic frequency is 28KHz, ultrasonic intensity is 0.3V).
[0028] (3) Low-frequency ultrasonic removal of large boron carbide particles (particle size 40-70 μm): prepare a cleaning agent solution with a concentration of 1% in a stainless steel tank, heat it to 65 ° C, place the wafer in the solution, and ultrasonically (ultrasonic frequency is 28KHz) , Ultrasonic intensity is 0.3V) wash 10min, take out.
[0029] The main components of the cleaning agent solution are non-ionic and anioni...
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