Ground sapphire substrate slice boron carbide cleaning method

Abstract

The invention discloses a ground sapphire substrate slice boron carbide cleaning method. The method specifically comprises the steps of (1) conducting pure water ultrasonic cleaning to remove big-particle-size boron carbide micro powder adhering to the surfaces of wafers; (2) conducting low-frequency ultrasonic cleaning through cleaning fluid to remove big-particle-size boron carbide micro powderadhering to the surfaces of the wafers; (3) conducting physical grinding in the cleaning fluid to remove medium-particle-size boron carbide micro powder adhering to the surfaces of wafers; (4) conducting high-frequency ultrasonic cleaning through the cleaning fluid to remove small-particle-size boron carbide micro powder inlaid on the surfaces of the wafers; and (5) conducting acid corrosion to roughen the surfaces to remove tiny boron carbide micro powder on the surfaces of the wafers. According to the ground sapphire substrate slice boron carbide cleaning method provided by the invention, different cleaning processes and procedures are designed for different particle sizes of boron carbide micro powder to achieve the purpose of completely removing the boron carbide micro powder on the surfaces of the wafers. The ground sapphire substrate slice boron carbide cleaning method has the advantages of short technological process and high one-time yield. The abnormal problems that the cleaning yield is low and the quality is poor through a traditional process are solved.

Description

technical field [0001] The invention belongs to the field of crystal processing, and in particular relates to a cleaning method for boron carbide on a sapphire substrate sheet after grinding. Background technique [0002] In the traditional sapphire substrate grinding process, due to the high hardness of boron carbide, boron carbide is generally used as the grinding abrasive; however, due to the high temperature stability and chemical stability of boron carbide, the traditional cleaning process cannot clean the wafer surface. The boron carbide micropowder is cleaned. After the sapphire substrate undergoes high-temperature aerobic heat treatment, the boron carbide is decomposed into carbon trioxide and diboron trioxide. White spots will form on the boron carbide coverage area on the surface of the original wafer, forming a color difference with the normal area. Thereby affecting product quality, resulting in lower processing yield. Therefore, the cleaning method after boron ...

AI Technical Summary

Problems solved by technology

[0003] In view of the defects of the existing cleaning process after boron carbide grinding of sapphire substrates, the present invention provides a cleaning method for boron carbide grinding of sapphire substrates, and different cleaning processes and processes are designed for boron carbide micropowders of different particle size levels , to achieve the purpose of completely removing boron carbide powder on the surface of the wafer, with the characteristics of high first-time yield and easy operation