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Photolithographic process resolution enhancing method and device based on multi-target optimization

A technology of multi-objective optimization and resolution enhancement, which is applied in the direction of photolithography process exposure device, pattern surface photolithography process, micro-lithography exposure equipment, etc., can solve the problem of increasing the difficulty and optimization time of technical solutions The window is difficult to lift and other problems

Active Publication Date: 2019-12-20
MOYAN COMPUTATIONAL SCI NANJING PTE LTD
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Problems solved by technology

[0004] However, by establishing a comprehensive evaluation function in this way, the realization of resolution enhancement technology is converted from a multi-objective optimization problem to a weighted single-objective optimization method, and the weight coefficient The penalty factors of various optimization evaluation criteria need to be optimized by engineers based on experience or numerical simulation experiments, which increases the difficulty and time of optimization of technical solutions, making it difficult to improve the window of lithography process

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  • Photolithographic process resolution enhancing method and device based on multi-target optimization
  • Photolithographic process resolution enhancing method and device based on multi-target optimization
  • Photolithographic process resolution enhancing method and device based on multi-target optimization

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Embodiment Construction

[0068] Certain exemplary embodiments will now be described to provide an overall understanding of the principles of the structure, function, manufacture, and use of the devices and methods disclosed herein. One or more examples of these implementations are illustrated in the accompanying drawings. Those of ordinary skill in the art will appreciate that the devices and methods specifically described herein and illustrated in the accompanying drawings are non-limiting exemplary embodiments and that the scope of the various embodiments of the present application is limited only by the claims Book limited. Features shown or described in connection with one exemplary embodiment may be combined with features of other embodiments. Such modifications and variations are intended to be included within the scope of this application.

[0069] Reference throughout this specification to "a number of embodiments," "some embodiments," "one embodiment," or "an embodiment" means that a partic...

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Abstract

The invention relates to the technical field of the photolithographic process for semiconductor production and particularly relates to a photolithographic process resolution enhancing method and device based on multi-target optimization. The method comprises steps of obtaining regional division of an illumination light source through a method of dividing a plurality of circles to be overlapped foroptimizing the light source; determining an initial position of a sub-resolution auxiliary graph SRAF position variable for optimizing a mask; establishing a population of optimization variables by using a real number encoding method; determining an evaluation standard function of a multi-target optimization strategy for a single chromosome in the population by calculating a photolithographic model; repeatedly carrying out evaluation-selection-crossover-variation calculation of the current population by using the genetic evolution algorithm to obtain iterative update of the evaluation standard function; decoding a final population to obtain a solution set Pareto support solution of the multi-target optimization strategy.

Description

technical field [0001] The present application relates to the technical field of lithography process for semiconductor production, in particular, to a method and device for enhancing the resolution of lithography process based on multi-objective optimization. Background technique [0002] Lithography technology has experienced i-line, g-line, 248nmKrf and 193nmArf lithography light source equipment. At present, the most advanced lithography is EUV lithography technology. IC foundries continue to use 193nm lithography technology for production at current advanced process nodes. At the same time, a variety of lithography resolution enhancement technologies have been developed: optical proximity correction technology (OPC), item shift mask technology (PSM), light source-mask collaborative optimization (SMO), etc. Resolution enhancement technology is used in image fidelity research at advanced process nodes to improve the yield rate of chip design in actual production. SMO tec...

Claims

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/70425G03F7/70491
Inventor 周洁云崔绍春陈雪莲
Owner MOYAN COMPUTATIONAL SCI NANJING PTE LTD
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