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Molding material composition for SiC and GaN element sealing, electronic component device

A molding material and sealing technology, applied in semiconductor/solid-state device parts, electrical components, circuits, etc., can solve problems such as high withstand voltage power semiconductor modules, achieve high thermal decomposition resistance, excellent curability and formability , The effect of high voltage resistance

Active Publication Date: 2022-07-22
KYOCERA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, as long as this SiC element is used, it is possible to realize a power semiconductor module with a high withstand voltage

Method used

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  • Molding material composition for SiC and GaN element sealing, electronic component device
  • Molding material composition for SiC and GaN element sealing, electronic component device
  • Molding material composition for SiC and GaN element sealing, electronic component device

Examples

Experimental program
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Effect test

Embodiment

[0291] Next, the present invention will be specifically described by way of examples, but the present invention is not limited by these examples at all.

[0292] (Examples 1A to 23A, Examples 1B to 3B, Examples 1C to 11C, Comparative Examples 1A to 4A, Comparative Examples 1B to 6B, and Comparative Examples 1C to 3C)

[0293] Each component of the kind and compounding quantity described in Table 1-1, Table 1-2, and Tables 2-5 was kneaded with a biaxial mixing roll, and the sealing molding material composition was prepared. The kneading temperature in each of the Examples and Comparative Examples was set to about 120°C. It should be noted that the blank column in each table indicates that there is no cooperation.

[0294] The details of each component described in Table 1-1, Table 1-2, and Tables 2 to 5 used for the preparation of the sealing molding material composition are as follows.

[0295]

[0296] [Ingredient (A)]

[0297] BMI-1000: N,N'-(4,4'-diphenylmethane)bismal...

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Abstract

A molding material composition for sealing SiC and GaN components, which contains (A) maleimide resin, (B) curing agent, (D) curing accelerator and (E) filler, said (E) The filler contains (e-1) hollow structure filler.

Description

Technical field [0001] The present invention relates to a molding material composition for sealing SiC and GaN elements and an electronic component device. Background technique [0002] In the past, epoxy resin molding materials have been widely used in the field of sealing electronic components such as transistors and ICs. This is because epoxy resin has an excellent balance of electrical properties, moisture resistance, mechanical properties, and adhesion to inserts. [0003] In recent years, there has been increasing anxiety about future depletion of resources and energy, and there has been an increasing momentum for energy conservation around the world against the background of the so-called global warming problem. For controlling or converting electric power, power devices (power semiconductors), which are called "key equipment of energy-saving technology", have attracted attention. [0004] For power semiconductors, power conversion efficiency is an item that determi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L79/00C08K7/22C08L61/00C08L63/00H01L23/12H01L23/29H01L23/31
CPCC08K7/22C08L61/00C08L63/00C08L79/00H01L23/12H01L23/29H01L23/31
Inventor 渡边尚纪藏勇人
Owner KYOCERA CORP