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Photodetector, manufacturing method thereof, and image sensor

A photodetector and conductor technology, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problem that the size of the pixel unit is difficult to reduce, and achieve the effect of reducing signal difference, reducing size, and improving stability and quality.

Active Publication Date: 2022-02-15
NINGBO SEMICON INT CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a photodetector and its manufacturing method and image sensor to solve the problem that the photodetection and imaging devices in the prior art are limited by the technical bottleneck of micro-solder spot welding technology and the size of the pixel unit is difficult to reduce.

Method used

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  • Photodetector, manufacturing method thereof, and image sensor
  • Photodetector, manufacturing method thereof, and image sensor
  • Photodetector, manufacturing method thereof, and image sensor

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Embodiment Construction

[0069] The photodetector, its manufacturing method, and image sensor proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0070] First, please refer to image 3 , which is a schematic cross-sectional view of a photodetector according to an embodiment of the present invention. like image 3 As shown, in the embodiment of the present application, the photodetector 200 includes: a first substrate 210, a plurality of pixel circuits 211 and a common electrode access member 212 are formed in the first substrate 210, the first substrate A plurality of first wiring ...

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Abstract

The invention provides a photodetector, a manufacturing method thereof, and an image sensor. The photodetector includes: a plurality of pixel circuits and a common electrode access piece are formed in a first substrate, and a plurality of first substrates are formed on the front surface. Wiring board, the first wiring board is electrically connected with the corresponding pixel circuit, a plurality of pixel units and a partition wall is formed in the second base to isolate each pixel unit, the partition wall includes a conductor and a circuit between the conductor and the pixel For the side walls between the units, a plurality of second wiring boards are formed on the front side of the second base, and the second wiring boards are correspondingly connected to the first terminals of the corresponding pixel units, and a transparent electrode layer is formed on the back side of the second base, each The second terminal of each pixel unit is connected to the transparent electrode layer, the second wiring board is correspondingly bonded and electrically connected to the corresponding first wiring board, and the transparent electrode layer is electrically connected to the common electrode access piece through a conductor, so that The size of the pixel unit can be greatly reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a photodetector, a manufacturing method thereof, and an image sensor. Background technique [0002] The photoelectric detection and imaging device based on the photoelectron effect is based on the photoelectron signal generated by the irradiated semiconductor optoelectronic material caused by the received external radiation, and the detection signal or image is obtained through signal amplification and processing. This photoelectric detection and imaging device is widely used in various fields of industry, automobile and national economy. In the near-infrared band, this photoelectric detection and imaging device is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band (850 nm to 12 micron wavelength), it is mainly used for infrared imaging, infrared remote sensing, cited etc. [0003] Please refer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14634H01L27/14636H01L27/1469H01L27/146H01L27/14609
Inventor 罗海龙
Owner NINGBO SEMICON INT CORP
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