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Formation method of enhanced field effect transistor

A field-effect transistor, enhancement-mode technology, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as limiting applications

Inactive Publication Date: 2020-01-07
南京飞芯电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the special manufacturing process of SOI MOSFET limits its application in bulk silicon CMOS process

Method used

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  • Formation method of enhanced field effect transistor
  • Formation method of enhanced field effect transistor

Examples

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Embodiment 2

[0015] figure 2 Example 2 of polysilicon channel SOI MOSFET, forming a double-gate device

[0016] figure 2 An example of forming a double-gate polysilicon channel SOI MOSFET is given, which is compatible with figure 1 The difference of the illustrated embodiment is that an N-type doped region is formed on the substrate as the second gate of the device, and other processes are the same as in the first embodiment. The N-type doped region of the substrate can be formed using an existing process.

[0017] Different from the device channel in the existing bulk silicon CMOS process and SOI CMOS process which is monocrystalline silicon, polysilicon channel is used in the present invention, so that the substrate of the device channel can be realized as insulating layer material instead of semiconductor silicon Material.

[0018] 4. Technical effects

[0019] This scheme implements a polysilicon channel SOI MOSFET under the bulk silicon process, and its advantages are that it h...

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Abstract

The invention provides a method for manufacturing a polycrystalline silicon channel SOI MOSFET under a bulk silicon CMOS process, which is suitable for double polycrystalline silicon processes such asan EEPROM process. The polycrystalline silicon channel SOI MOSFET has the SOI MOSFET characteristics such as small source-drain capacitance and easiness in forming isolation, and can be applied to the design of switching devices and the like.

Description

technical field [0001] The invention belongs to integrated circuit design and manufacture, and the invention relates to a method for forming an enhanced field effect transistor (MOSFET). Background technique [0002] Existing MOSFETs are mainly classified into bulk silicon (bulk-Silicon) MOSFETs or silicon-on-insulator (SOI) MOSFETs, and the fabrication of SOI MOSFETs requires special substrate materials and processes. At the same time, the SOI MOSFET has the advantages of small source-drain parasitic capacitance and the ability to adjust the threshold voltage through the substrate voltage. However, the special manufacturing process of SOI MOSFET limits its application in bulk silicon CMOS process. Contents of the invention [0003] 1. Purpose of the invention [0004] SOI MOSFETs with a polysilicon channel are implemented in a two-layer polysilicon process (eg, in an Electrically Erasable Programmable Read-Only Memory EEPROM process). The polysilicon channel SOI MOSFET...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/78675H01L29/78648H01L29/78603H01L29/66757
Inventor 宋丽丽
Owner 南京飞芯电子科技有限公司
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