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Crystalline silicon cast ingot heater

A heater and ingot casting technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems affecting the quality of silicon ingots and conversion efficiency

Pending Publication Date: 2020-01-10
JIANGSU XIEXIN SILICON MATERIAL TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Based on this, it is necessary to provide a crystalline silicon ingot heater for the cold wall effect caused by radiation heat transfer, which affects the quality and conversion efficiency of silicon ingots.

Method used

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  • Crystalline silicon cast ingot heater
  • Crystalline silicon cast ingot heater
  • Crystalline silicon cast ingot heater

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Embodiment Construction

[0031] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.

[0032] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to t...

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PUM

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Abstract

The invention relates to a crystalline silicon cast ingot heater, which comprises a top heater, wherein the middle area has large thickness and small resistance, and the peripheral edge area has smallthickness and large resistance; a side heater, wherein the middle and upper areas have large thickness and small resistance, while the lower areas of the side heater have small thickness and large resistance. The resistance of the peripheral edge area of a top heater is large, which can increase the calorific value of the peripheral edge area of the top heater to compensate the radiation heat dissipation of the area, so that the temperature of the top heater is uniform; the resistance of the lower area of the side heater is large, so that the calorific value of the lower area of the side heater can be increased to compensate the radiation heat dissipation amount of the lower area of the side heater, and the temperature of the side heater is uniform; due to the uniform temperature of the top heater and the side heater, the cold wall effect and the nucleation of the side wall of the crucible can be reduced during the ingot casting process, so that the fluctuation of the crystal growth rate at the smooth crystal growth interface is smaller, thus reducing the diffusion of the crucible coating into the crystal ingot, reducing the dislocation defects in the upper part of the crystal ingot, and improving the quality of polycrystalline silicon ingot.

Description

technical field [0001] The invention relates to the field of preparation of crystalline silicon ingots in crystalline silicon solar energy, in particular to a crystalline silicon ingot heater. Background technique [0002] With the continuous reduction of non-renewable fossil energy such as coal, oil, and natural gas, the energy crisis has become increasingly serious, and due to the massive exploitation and wanton use of fossil energy, the problem of environmental pollution has become increasingly serious. The development and use of renewable, clean and non-polluting new energy that replaces fossil energy has become the most effective way to solve the energy crisis. Solar energy has the advantages of being clean, non-polluting and inexhaustible, and is an ideal alternative energy source for fossil energy. [0003] Industrial production of polysilicon ingot heaters generally use isostatic high-purity graphite heaters and CC heaters, which are mostly divided into two parts: t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 王双丽张华利胡动力
Owner JIANGSU XIEXIN SILICON MATERIAL TECH DEV