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Method for detecting shallow defects on surface of polished silicon wafer

A silicon wafer surface and silicon wafer technology, which is applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve problems such as missed detection, light source reflection damage to human eyes, and difficult detection by human eyes, so as to prevent missed detection Effect

Active Publication Date: 2020-01-10
上海中欣晶圆半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] During the actual final darkroom inspection (after pre-cleaning), some surface defects with a depth of (500-1000A), such as dark damage, mechanical damage, polishing marks, etc., are difficult for human eyes to detect under spotlights or strong lights. There is a certain risk of missed detection
When the spotlight or strong light source is directly viewed with the human eye at 60-90 degrees, it will cause certain light source reflection damage to the human eye

Method used

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  • Method for detecting shallow defects on surface of polished silicon wafer
  • Method for detecting shallow defects on surface of polished silicon wafer
  • Method for detecting shallow defects on surface of polished silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Take a piece of polished silicon wafer and detect shallow defects on the surface of the polished silicon wafer. The specific steps are as follows:

[0024] 1. Use the mixture ratio of ammonia water, hydrogen peroxide and deionized water to clean the polished silicon wafer.

[0025] 2. Add a fluorescent lamp under the darkroom, equipped with 220V power supply, the requirements are as follows:

[0026] 2.1 The color temperature and brightness are at 2000K (Kelvin temperature), purple-red range.

[0027] 2.2 fluorescent lamp power 40 watts.

[0028] 2.3 Standard access to 220V power supply.

[0029] 3. Turn on the fluorescent lamp and make an angle of 45 degrees with the front surface of the polished silicon wafer, and observe the shallow defects on the front surface of the silicon wafer. It can be clearly observed that there are polishing traces on the front surface of the polished silicon wafer, such as figure 1 shown.

[0030] 4. Turn on the fluorescent lamp and ma...

Embodiment 2

[0033] Take a piece of polished silicon wafer and detect shallow defects on the surface of the polished silicon wafer. The specific steps are as follows:

[0034] 1. Use the mixture ratio of ammonia water, hydrogen peroxide and deionized water to clean the polished silicon wafer.

[0035] 2. Add a fluorescent lamp under the darkroom, equipped with 220V power supply, the requirements are as follows:

[0036] 2.1 The color temperature and brightness are at 3000K (Kelvin temperature), purple-red range.

[0037] 2.2 fluorescent lamp power 50 watts.

[0038] 2.3 Standard access to 220V power supply.

[0039] 3. Turn on the fluorescent lamp and make an angle of 60 degrees with the front surface of the polished silicon wafer, and observe the shallow defects on the front surface of the silicon wafer.

[0040] 4. Turn on the fluorescent lamp and make an angle of 60 degrees with the back surface of the polished silicon wafer, and observe the shallow defects on the back surface of the...

Embodiment 3

[0043] Take a piece of polished silicon wafer and detect shallow defects on the surface of the polished silicon wafer. The specific steps are as follows:

[0044] 1. Use the mixture ratio of ammonia water, hydrogen peroxide and deionized water to clean the polished silicon wafer.

[0045] 2. Add a fluorescent lamp under the darkroom, equipped with 220V power supply, the requirements are as follows:

[0046] 2.1 The color temperature and brightness are at 2500K (Kelvin temperature), purple-red range.

[0047] 2.2 fluorescent lamp power 45 watts.

[0048] 2.3 Standard access to 220V power supply.

[0049] 3. Turn on the fluorescent lamp and make an angle of 50 degrees with the front surface of the polished silicon wafer, and observe the shallow defects on the front surface of the silicon wafer.

[0050] 4. Turn on the fluorescent lamp and make an angle of 50 degrees with the back surface of the polished silicon wafer, and observe the shallow defects on the back surface of the...

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Abstract

The invention discloses a method for detecting shallow defects on the surface of a polished silicon wafer. A fluorescent lamp is adopted as a lamp source. The fluorescent lamp source has certain transmission force, is a reflecting light source forming an angle of 45-60 degrees with human eyes, and can identify some shallow defects on the surface, so that missed detection is prevented, and a polished silicon wafer with higher quality can be provided for customers. Because the fluorescent lamp source is a cold-color lamp source, the light source can hardly damage the eyes of a human body. Operation can be carried out after a fluorescent lamp source is additionally arranged under an existing darkroom condition. Detection personnel can carry out detection after simple training. The method is simple, safe and effective.

Description

technical field [0001] The invention relates to a single crystal silicon wafer, in particular to a method for detecting superficial defects on a polished silicon wafer, which is applicable to the field of silicon wafers. Background technique [0002] In recent years, IC chips (Integrated Circuit Chips) have developed rapidly in the direction of high integration, shallow junction, high performance, and low power consumption. With the gradual popularization of miniaturization and high precision. The entire IC industry has higher and higher requirements for its product control technology. Therefore, the quality of polished silicon wafers of substrate suppliers is required to achieve zero defects. [0003] During the actual final darkroom inspection (after pre-cleaning), some surface defects with a depth of (500-1000A), such as dark damage, mechanical damage, polishing marks, etc., are difficult for human eyes to detect under spotlights or strong lights. There is a certain ris...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/66
CPCH01L21/02013H01L22/12
Inventor 李厚贺贤汉尚散散
Owner 上海中欣晶圆半导体科技有限公司