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Zero-bubble Ge/Si heterogeneous hybrid integration method capable of realizing lattice blocking

A technology of hybrid integration and bubbles, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as bubbles and oxide layers that are difficult to eliminate and lattice mismatches that are difficult to block

Active Publication Date: 2020-01-10
MINNAN NORMAL UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problems of high TDD in the epitaxial Si-based Ge thin film and the difficulty of blocking the lattice mismatch of the Ge / Si heterogeneous bonding interface, and the difficulty of eliminating bubbles and oxide layers, the present invention proposes a zero-bubble Ge that realizes lattice blocking. / Si heterogeneous hybrid integration method, which uses a-Si and a-Ge double-stack bonding interlayer structure to achieve low-temperature Ge / Si bonding, and uses the amorphous characteristics of a-Si to block single-crystal Si and Lattice mismatch between single crystals of Ge realizes truly dislocation-free Ge / Si bonding, and uses the loose structure of a-Si to completely eliminate bonding interface bubbles to obtain a zero-bubble Ge / Si bonding interface

Method used

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  • Zero-bubble Ge/Si heterogeneous hybrid integration method capable of realizing lattice blocking
  • Zero-bubble Ge/Si heterogeneous hybrid integration method capable of realizing lattice blocking
  • Zero-bubble Ge/Si heterogeneous hybrid integration method capable of realizing lattice blocking

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Embodiment 1

[0029] 1. Treatment of Si and Ge substrate materials

[0030] 1) Select Si and Ge substrates with a crystal orientation of (100), and use acetone, ethanol, and deionized water to ultrasonically clean them for 10-15 minutes, respectively, to remove particles and organic matter attached to the surface of the substrate;

[0031] 2) Use the Si sheet after organic ultrasonic cleaning with a ratio of H 2 SO 4 :H 2 o 2 =4:1 (v / v) solution is boiled for 10~15 min, rinsed with deionized water for 10~15 times, and the ratio is HF:H 2 Soak in O=1:20 (v / v) solution for 2~4 min, rinse with deionized water for 10~15 times;

[0032] 3) Next, the Si sheet is used with a ratio of NH 4 OH:H 2 o 2 :H 2 The solution of O=1:1:4 (v / v / v) was boiled for 10~15 minutes, rinsed with deionized water for 10~15 times, and then used with a ratio of HF:H 2 Soak in O=1:20 (v / v) solution for 2-4 minutes, rinse with deionized water for 10-15 times;

[0033] 4) Finally, the proportion of Si sheet is H...

Embodiment 2

[0046] 1. Treatment of Si and Ge substrate materials

[0047] 1) Select Si and Ge substrates with a crystal orientation of (100), and use acetone, ethanol, and deionized water to ultrasonically clean them for 10-15 minutes, respectively, to remove particles and organic matter attached to the surface of the substrate;

[0048] 2) Use the Si sheet after organic ultrasonic cleaning with a ratio of H 2 SO 4 :H 2 o 2 =4:1 (v / v) solution is boiled for 10~15 min, rinsed with deionized water for 10~15 times, and the ratio is HF:H 2 Soak in O=1:20 (v / v) solution for 2~4 min, rinse with deionized water for 10~15 times;

[0049] 3) Next, the Si sheet is used with a ratio of NH 4 OH:H 2 o 2 :H 2 The solution of O=1:1:4 (v / v / v) was boiled for 10~15 minutes, rinsed with deionized water for 10~15 times, and then used with a ratio of HF:H 2 Soak in O=1:20 (v / v) solution for 2-4 minutes, rinse with deionized water for 10-15 times;

[0050] 4) Finally, the proportion of Si sheet is H...

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Abstract

The invention discloses a zero-bubble Ge / Si heterogeneous hybrid integration method capable of realizing lattice blocking. The method is specifically characterized in that, by introducing a Si and Gedouble-laminated structure in an amorphous structure into a Ge / Si bonding interface, on one hand, non-oxide-layer high-strength Ge / Si bonding is realized through annealing crystallization of a-Ge, andon the other hand, lattice mismatch between single crystal Si and single crystal Ge is blocked by utilizing the a-Si, so that a mismatch dislocation source is thoroughly shielded; and discharge of byproducts of the bonding interface and thorough blocking of crystal lattice are realized through the a-Si in a loose structure, so that a Ge / Si bonding interface with no interfacial bubbles, no oxide layer and no threading dislocation is prepared.

Description

technical field [0001] The present invention relates to a new method of zero-bubble Ge / Si heterogeneous hybrid integration that can realize lattice blocking, and in particular to a bonding technology that utilizes a-Ge / a-Si double-stacked semiconductor interlayers. The annealing and crystallization of a-Ge realizes high-strength Ge / Si bonding without an oxide layer. On the other hand, the a-Si with a loose structure realizes the discharge of by-products at the bonding interface and the complete blocking of the crystal lattice to prepare interface-free bubbles. , Ge / Si bonding interface without oxide layer and threading dislocations. Background technique [0002] Due to the 4.2% lattice mismatch between Si and Ge materials, heteroepitaxial Ge thin films on Si substrates will introduce threading dislocations (TD) into the Ge films, and the threading dislocation density (TDD) is as high as ~ 10 7 -10 9 cm -2 (Huang, S., et al.(2012). Depth-dependent etch pit density in Ge e...

Claims

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Application Information

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IPC IPC(8): H01L21/18H01L21/02
CPCH01L21/187H01L21/02381H01L21/02532
Inventor 柯少颖陈松岩黄东林周锦荣
Owner MINNAN NORMAL UNIV