Preparation method of Au thin film

A technology of thin film and film layer, which is applied in the direction of ion implantation plating, coating, metal material coating process, etc., can solve the problems of poor structural stability of Au thin film, and achieve the reduction of discontinuity, uniform change of continuous composition, and reduction of thin film Effect of Microstructural Defects

Active Publication Date: 2020-01-24
航天科工惯性技术有限公司
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Problems solved by technology

[0004] The purpose of the present invention is to propose a method for preparing an Au thin film, which can effectively improve the structural stability of the Au thin film, in order to solve the problem of poor structural stability of the Au thin film caused by the heterostructure lattice adaptation in the prior art

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  • Preparation method of Au thin film
  • Preparation method of Au thin film

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Embodiment Construction

[0029] In order to make the object, technical solution and effect of the present invention more clear and definite, the present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0030] refer to figure 1 and figure 2 , the present embodiment provides a method for preparing an Au thin film, comprising:

[0031] Step S101, preparing the substrate 202, and fixing the substrate 202 on the substrate stage 201;

[0032] Step S102, installing the planar Au target 203 and the planar Cr target 204, so that the planar Cr target 204 and the surface of the substrate form a first preset angle, and the planar Au target 203 and the surface of the substrate form a second preset angle;

[0033] Step S103, delivering argon gas, controlling the pressure of argon gas to a preset pre...

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Abstract

The invention provides a preparation method of an Au thin film. By controlling the speed of motion of a planar Cr target and a planar Au target, the target substrate distances of the planar Cr targetand the planar Au target are simultaneously adjusted, the film forming speed of a Cr layer and the film forming speed of the Au thin film is made to change in proportion, an alloy transition layer isformed between the Cr layer and the Au thin film, and in the process, the power density of Au is linearly adjusted relative to the power density of Cr, so that the film forming speed inconformity caused by the difference of the sputtering yield of the Cr and the Au is reduced, the continuous change of the Cr and Au components can be realized compared with a transition layer plated with an alloy target, the non-continuity of indexes such as the thermal expansion coefficient between heterogeneous structures is reduced, and the stability of an Au thin film structure is further improved.

Description

technical field [0001] The invention relates to the technical field of coating processing, in particular to a method for preparing an Au thin film. Background technique [0002] Au thin films have good electrical conductivity and chemical inertness, and are widely used in semiconductors, micro-electromechanical systems, biosensing and other fields. With their low resistivity and high chemical stability, they are often used in leads and electrodes of various devices. In order to reduce the difference in thermal expansion coefficient between the Au film and the substrate material, Cr film is usually used as the main transition layer between the Au film and the substrate material. The stability of the Cr / Au thin film heterostructure has a direct impact on the performance of the device. Under the action of environmental stress, the change of internal stress caused by the interface lattice mismatch of the heterostructure may lead to the gap between the film and the substrate. Po...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/14C23C14/54
CPCC23C14/14C23C14/352C23C14/548
Inventor 秦淑斌王宝军袁枫周锋许中生王志韩旭王文磊
Owner 航天科工惯性技术有限公司
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