Simulation analysis method of composite conductive film, electronic equipment thereof and storage medium

Abstract

The invention discloses a simulation analysis method of a composite conductive film, electronic equipment thereof and a storage medium. The simulation analysis method comprises the following steps: modeling a high-dielectric-constant substrate and a composite conductive film layer to obtain a high-dielectric-constant substrate geometric model and a composite conductive film layer geometric model;setting a material module and a plurality of physical field interface modules for the geometric model of the high dielectric constant substrate and the geometric model of the composite conductive filmlayer, and setting boundary conditions for each physical field interface module to obtain a composite conductive film model based on the high dielectric constant substrate; and establishing a finiteelement mesh model on the composite conductive film model based on the high dielectric constant substrate, and calculating the finite element mesh model to obtain a simulation result. According to thesimulation analysis method, the high-dielectric-constant substrate and the composite conductive film layer are synchronously modeled, and the interaction between the high-dielectric-constant substrate and the composite conductive film layer is considered, so that the shedding condition of the composite conductive film layer on the high-dielectric-constant substrate is evaluated, and the simulation model is closer to the actual condition, and the simulation result is high in accuracy.

Description

[0001] technology neighborhood [0002] The invention belongs to the technical field of simulation calculation of satellite-borne microwave semiconductor devices, and in particular relates to a simulation analysis method of a composite conductive film, electronic equipment, and a storage medium. Background technique [0003] With the continuous development of space-borne microwave products in the direction of high density and high integration, the original solid-lay manufacturing mode based on alumina ceramic substrate and HMIC technology can no longer meet the needs of miniaturization and light weight. Therefore, it is urgent to find a A reliable way to significantly improve the miniaturization level of matching in high-power solid-discharge circuits. [0004] Traditional simulation analysis methods include finite element analysis (Finite Element Analysis, FEA for short), and finite element analysis methods generally only model and simulate composite conductive film layers or...

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Problems solved by technology

[0005] The traditional simulation analysis method does not model the high dielectric constant substrate and the composite conductive film layer simultaneously, so it does not take into account the interaction force between the bottom of the composite conductive film layer and the high dielectric constant substrate, so it is difficult to accurately simulate the composite conductive film layer. The physical field effect after the layer is energized and the force of the composite conductive film layer relative to the high dielectric constant substrate, so the accuracy of the simulation results is not high

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