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Nitriding treatment method of substrate

A nitriding treatment and substrate technology, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as the instability of nitriding treatment

Active Publication Date: 2020-02-04
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a nitriding treatment method for the substrate, to solve the problem of unstable nitriding treatment caused by the existing nitriding treatment method

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  • Nitriding treatment method of substrate
  • Nitriding treatment method of substrate
  • Nitriding treatment method of substrate

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Embodiment Construction

[0038] As described in the background, in the related art, a plurality of substrates are nitridated, wherein the substrates generally include oxygen-containing substrates (such as silicon oxide substrates) or non-oxygen-containing substrates (such as silicon substrates or nitrided substrates). silicon substrate). And, generally speaking, the same cavity is used in this field to carry out nitriding treatment on multiple substrates, and when multiple substrates are processed, the material of the surface layer of the microwave transmission plate will change, which will make the nitrogen chemical processing instability.

[0039] Specifically, the material of the microwave-transmitting plate is generally silicon dioxide. On this basis, if multiple non-oxygen-containing substrates are processed in the cavity, the first few non-oxygen-containing substrates At this time, after the injected nitrogen gas is plasmaized to form nitrogen atoms, part of the nitrogen atoms will penetrate in...

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Abstract

The invention provides a nitriding treatment method of a substrate, which comprises the steps of providing a plasma nitriding device, wherein the device comprises a cavity, a gas conveying channel communicated with the cavity and a microwave transmitting plate arranged in the cavity, and the microwave transmitting plate is used for transmitting microwaves to form an electromagnetic field in the cavity so as to perform plasma treatment on the gas in the cavity; introducing a predetermined gas to convert the surface layer of the microwave transmitting plate into a nitride layer or a nitrogen oxide layer; providing at least one substrate, and placing the substrate in the cavity to perform nitriding treatment on the substrate, wherein when the substrate comprises a non-oxygen-containing substrate, the surface layer of the microwave transmitting plate is converted into a nitride layer before the substrate is placed in the cavity, and when the substrate comprises an oxygen-containing substrate, the surface layer of the microwave transmitting plate is converted into a nitrogen oxide layer before the substrate is placed in the cavity. When the nitriding method provided by the invention isadopted to carry out nitriding treatment on the substrate, the stability is relatively high.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a substrate nitriding treatment method. Background technique [0002] In the semiconductor field, it is usually necessary to perform nitriding treatment on the semiconductor substrate. For example, in the preparation process of the storage device, a nitride layer can be formed on the surface layer of the semiconductor substrate to prevent the bird's beak effect and enhance the performance of the final storage device. Data retention and reliability. [0003] In the related art, the method of nitriding the semiconductor substrate is as follows: first inject nitrogen gas into the cavity, and use a planar antenna to radiate microwaves, and use a microwave transmission plate connected to the planar antenna to transmit the microwaves to the inside of the cavity , to form an electromagnetic field in the cavity, under the action of the electromagnetic field, the nitrogen in the c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/0217H01L21/02247H01L21/02252H01L21/02299H01L21/02312
Inventor 王青董雅娟
Owner SHANGHAI HUALI MICROELECTRONICS CORP