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Substrate nitriding treatment method

A technology of nitriding treatment and substrate, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of unstable nitriding treatment, etc., to ensure the stability, the strength of the electromagnetic field, and the difference in the degree of nitriding small effect

Active Publication Date: 2021-11-26
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a nitriding treatment method for the substrate, to solve the problem of unstable nitriding treatment caused by the existing nitriding treatment method

Method used

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  • Substrate nitriding treatment method
  • Substrate nitriding treatment method
  • Substrate nitriding treatment method

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Embodiment Construction

[0038] As described in the background, in the related art, a plurality of substrates are nitridated, wherein the substrates generally include oxygen-containing substrates (such as silicon oxide substrates) or non-oxygen-containing substrates (such as silicon substrates or nitrided substrates). silicon substrate). And, generally speaking, the same cavity is used in this field to carry out nitriding treatment on multiple substrates, and when multiple substrates are processed, the material of the surface layer of the microwave transmission plate will change, which will make the nitrogen chemical processing instability.

[0039] Specifically, the material of the microwave-transmitting plate is generally silicon dioxide. On this basis, if multiple non-oxygen-containing substrates are processed in the cavity, the first few non-oxygen-containing substrates At this time, after the injected nitrogen gas is plasmaized to form nitrogen atoms, part of the nitrogen atoms will penetrate in...

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Abstract

The invention provides a substrate nitriding treatment method, comprising: providing a plasma nitriding device, the device includes a cavity, a gas delivery channel communicated with the cavity, and a microwave transparent plate arranged in the cavity, the microwave transparent The pass-through plate is used to transmit microwaves to form an electromagnetic field in the cavity, and then plasmaize the gas in the cavity; pass a predetermined gas so that the surface layer of the microwave permeable plate is converted into a nitride layer or a nitrogen oxide layer; provide at least one and placing the substrate in the cavity to perform nitriding treatment on the substrate; wherein, when the substrate includes a non-oxygen-containing substrate, before placing the substrate in the cavity, the surface layer of the microwave-transmitting plate is converted into Nitride layer; when the substrate includes an oxygen-containing substrate, before placing the substrate in the cavity, the surface layer of the microwave-transmitting plate is a nitrogen oxide layer. When the nitriding method provided by the invention is used to carry out nitriding treatment on the substrate, its stability is relatively high.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a substrate nitriding treatment method. Background technique [0002] In the semiconductor field, it is usually necessary to perform nitriding treatment on the semiconductor substrate. For example, in the preparation process of the storage device, a nitride layer can be formed on the surface layer of the semiconductor substrate to prevent the bird's beak effect and enhance the performance of the final storage device. Data retention and reliability. [0003] In the related art, the method of nitriding the semiconductor substrate is as follows: first inject nitrogen gas into the cavity, and use a planar antenna to radiate microwaves, and use a microwave transmission plate connected to the planar antenna to transmit the microwaves to the inside of the cavity , to form an electromagnetic field in the cavity, under the action of the electromagnetic field, the nitrogen in the c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/0217H01L21/02247H01L21/02252H01L21/02299H01L21/02312
Inventor 王青董雅娟
Owner SHANGHAI HUALI MICROELECTRONICS CORP