Binary memristor circuit simulator

A technology of circuit simulation and memristor, which is applied in the field of memristor circuit emulator and binary memristor circuit emulator, can solve the problems of not having non-volatile characteristics, etc.

Pending Publication Date: 2020-02-07
HANGZHOU DIANZI UNIV
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most memristive circuit simulators are based on a ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Binary memristor circuit simulator
  • Binary memristor circuit simulator
  • Binary memristor circuit simulator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] Below in conjunction with accompanying drawing, the present invention will be further described:

[0010] The invention is composed of an operational amplifier, a current follower, a multiplier, a resistor and a capacitor. The model of the operational amplifier is TL084, the model of the current transmitter is AD844, and the model of the multiplier is AD633. A and B in the figure are the two ends of the memristor circuit simulator, v is the voltage at both ends of the memristor, and i is the current flowing through the memristor. The operational amplifier U1 and operational amplifier U2 in part ① constitute a voltage follower with isolation function, and the operational amplifier U3 and four resistors R in part ② sb1 , R sb2 , R sb3 , R sb4 form a differential circuit where R sb1 = R sb2 = R sb3 = R sb4 , then the output signal of the differential circuit is:

[0011] v sub =v A -v B = v (1)

[0012] At this time, the output voltage of the differential circu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a binary memristor circuit emulator, which adopts a binary memristor circuit emulator consisting of an operational amplifier, a current transmitter, a multiplier, a resistor and a capacitor, and adapts to different working frequency ranges by selecting integral circuit parameters. A reverse hysteresis circuit is adopted, so that the two resistance states of the memristor can be kept and switched, and the ratio of the high resistance state to the low resistance state can be changed by adjusting the parameters of the reverse addition circuit. The circuit simulator can bedirectly connected with an actual circuit component, and is suitable for research and application of the memristor in the field of digital logic.

Description

technical field [0001] The invention relates to a memristor circuit emulator, in particular to a binary memristor circuit emulator, which is suitable for the research field of memristors and memristor application circuits. Background technique [0002] According to the mathematical relationship between missing magnetic flux and charge, Professor Cai Shaotang speculated that there is a fourth basic circuit element, the memristor. It is a non-linear two-terminal circuit element, which can be applied in the fields of non-volatile memory, digital logic, neural network and analog circuit design. The high and low resistance states of memristors can be regarded as "0" and "1" of digital logic, and it shows attractive application prospects in the fields of digital logic circuits and non-volatile memories by virtue of its unique binary characteristics. In 2008, the HP lab gave the first physical realization of a memristor using nanostructured passive components. At present, there a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F30/36G06F30/30
Inventor 梁燕卢振洲杨柳王永慧赵晓梅
Owner HANGZHOU DIANZI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products