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A smim capacitor structure and manufacturing method for improving breakdown resistance

A technology of capacitor structure and manufacturing method, applied in capacitors, circuits, electrical components, etc., can solve problems such as weak breakdown resistance, and achieve the effect of improving breakdown resistance, water vapor resistance and reliability.

Active Publication Date: 2021-12-10
福建省福联集成电路有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] For this reason, it is necessary to provide a method for manufacturing SMIM capacitors with improved breakdown resistance, so as to solve the problem of weak breakdown resistance of traditional SMIM capacitors

Method used

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  • A smim capacitor structure and manufacturing method for improving breakdown resistance
  • A smim capacitor structure and manufacturing method for improving breakdown resistance
  • A smim capacitor structure and manufacturing method for improving breakdown resistance

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Embodiment Construction

[0069] In order to explain in detail the technical content, structural features, achieved goals and effects of the technical solution, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.

[0070] see Figure 1 to Figure 2 , the present embodiment provides a method for manufacturing a SMIM capacitor structure that improves the breakdown resistance. Fabrication is carried out on the epitaxial structure of the gallium arsenide layer (GaAs) and the substrate (Substrate), and the epitaxial structure can be gallium arsenide, gallium nitride, and EPI materials. The present invention can be used alone to make SMIM capacitors, or can be made together with transistors. Wherein the active device HBT (Heterojunction Bipolar Transistor) is fabricated in a non-insulating region on the first epitaxial structure 1 . The passive device SMIM capacitor is prepared in the insulating region on the second epitaxial structure 2, and the ent...

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Abstract

The invention discloses a SMIM capacitor structure and a manufacturing method for improving breakdown resistance, wherein the method includes the following steps: evaporating a first layer of metal on an insulating region of a second epitaxial structure to form a first plate of a capacitor; depositing a third Nitride layer, and etch the first guard ring window on the first layer of polar plate, retain the third nitride layer outside the first guard ring window as the first guard ring composition structure; deposit the fourth nitride layer, and A metal connection window is etched on one side of the first pole plate, and the fourth nitride layer remaining on the first pole plate serves as a structure composed of a first dielectric layer and a first protection ring. The guard ring structure composed of the third nitride layer, the fourth nitride layer, the fifth nitride layer, the sixth nitride layer and the polyimide layer can improve the breakdown resistance of the SMIM capacitor and improve the resistance of the capacitor device. Water vapor capability and reliability.

Description

technical field [0001] The invention relates to the field of manufacturing capacitors on semiconductor devices, in particular to a SMIM capacitor structure and a manufacturing method. Background technique [0002] The stacked film capacitor (STACK MIM, SMIM for short) currently used in the HBT MMIC is a parallel structure of two MIM capacitors, and its function is to increase the capacitance of the capacitor. However, in the manufacture of HBT integrated chips, in order to save production costs, the plate metal of the capacitor is often shared with the contact metal or wire metal of the three poles of the HBT, and the silicon nitride passivation layer of the three poles is often used. It is used as the dielectric layer of the SMIM capacitor, but while the capacitance is increased, its breakdown resistance will decrease; and in the structure of the SMIM, there is a certain level difference, which is easy to cause metal fracture. Contents of the invention [0003] Therefore...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L49/02H01L21/8252
CPCH01L27/067H01L28/60H01L28/40H01L21/8252
Inventor 林锦伟林伟铭钟艾东甘凯杰翁佩雪邓丹丹赵玉会吴恋伟
Owner 福建省福联集成电路有限公司