Method for quickly detecting phase change capability of phase change memory unit

Abstract

The invention discloses a method for quickly detecting the phase change capability of a phase change memory unit. The relation between the resistance drift coefficient v and the residual life N and the relation between the activation energy E sigma and the residual life N are obtained through each detection step on the basis of the activation energy characteristics of the phase change material andthe intrinsic characteristics of the phase change material without using a switch unit. The phase change performance of the phase change material layer is judged by testing the resistance drift process associated with the phase change material layer, a switching device is not needed, the test process is always a low readable current, and the service life of the device is not shortened. The physique stage of the unit can be judged by the control group, the distance to failure is long, the whole failure process does not need to be completely tested, and the test time is greatly reduced.

Description

technical field [0001] The invention belongs to the field of phase-change materials, and in particular relates to a rapid detection method for the phase-change ability of a phase-change memory unit, in particular to a memory with a chalcogenide phase-change material as a functional layer and its device testing. Background technique [0002] The phase change memory based on the chalcogenide phase change material stores information and data through the huge resistance difference between the two phases. This kind of phase change memory chip has the cost advantages of low power consumption and high density as the size decreases. Therefore, the industry pays great attention to the development of nanoscale phase change memory. With the increasing integration of modern chips, the requirements for chip performance testing are also getting higher and higher. Not only does the reliability testing process require low cost and short time, but it also requires less impact on unit perform...

AI Technical Summary

Problems solved by technology

[0005] For at least one of the above defects or improvement requirements in the prior art, especially, how to avoid reducing the lifespan of the memory during the test process, and / or how to reduce the time of data retention test, the test method based on the characteristics of the phase change material itself of the present invention can Provide new solutions to such problems

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