Half-bridge module with coaxial arrangement of the DC terminals

Abstract

A half-bridge module (10) comprises a substrate (12) with a base metallization layer (14) divided into a first DC conducting area (16), a second DC conducting area (20) and an AC conducting area (18);at least one first power semiconductor switch chip (22) bonded to the first DC conducting area (16) and electrically interconnected with the AC conducting area (18); at least one second power semiconductor switch chip (22) bonded to the AC conducting area (18) and electrically interconnected with the second DC conducting area (20); and a coaxial terminal arrangement (35) comprising at least one inner DC terminal (38), at least one first outer DC terminal (36) and at least one second outer DC terminal (40); wherein the at least one inner DC terminal (38), the at least first outer DC terminal (36) and the at least one second outer DC terminal (40) protrude from the module (10) and are arranged in a row, such that the at least one inner DC terminal (38) is coaxially arranged between the at least one first outer DC terminal (36) and the at least one second outer DC terminal (40); wherein the at least one inner DC terminal (38) is electrically connected to the second DC conducting area (20); wherein the at least one first outer DC terminal (36) and the at least one second outer DC terminal (40) are electrically connected to the first DC conducting area (16); and wherein the at least one first outer DC terminal (36) and the at least one second outer DC terminal (40) are electrically interconnected with an electrically conducting bridging element (52, 70) which is adapted for distributing at least a half of the load current between the at least one first outer DC terminal (36) and the at least one second outer DC terminal (40).

Description

technical field [0001] The invention relates to a half-bridge module. Background technique [0002] Power semiconductor modules containing solid-state semiconductor switches such as IGBTs or MOSFETs are used in various power electronics applications to switch or rectify current. An important and fast-growing application is converter systems for electric or hybrid electric vehicles. Typical modules for such applications may have voltage ratings as high as 1200V and current ratings of several hundred amps. [0003] It is possible to arrange several semiconductor switches in one power semiconductor module to form a half bridge and in this way to form a half bridge module. Such half-bridge modules are usually equipped with terminals for DC+, DC- and AC-. These terminals may protrude from the housing of the half-bridge module and may be used to interconnect the module with other electrical devices such as bus bars, DC capacitors and the like. [0004] It is desirable that the...

AI Technical Summary

Problems solved by technology

[0004] It is desirable that the commutation loop in the module and the interconnection to the module have low stray inductance, which e.g. causes short-circuit current rise times and gives rise to the possibility of achieving higher switching frequencies

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