Process chamber and semiconductor processing equipment

Abstract

The invention discloses a process chamber and semiconductor processing equipment. The process chamber comprises a chamber body and a cooling element arranged outside the chamber body in a sleeving mode, wherein a cooling gas channel is formed between the cooling element and the outer peripheral wall of the chamber body. The process chamber further comprises a temperature sensing element, a heatingelement and a control element, wherein the temperature sensing element and the heating element are electrically connected with the control element; the temperature sensing element is used for detecting the current actual temperature in the chamber body and sending the current actual temperature to the control element; and the control element is used for comparing the current actual temperature with a preset temperature and controlling the heating element to heat the chamber body when the current actual temperature is lower than the preset temperature. According to the invention, the reductionrate of the temperature in the cavity body can be effectively reduced, the uniformity of each technological process can be improved, the process yield is improved, and the manufacturing cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a process chamber and semiconductor processing equipment. Background technique [0002] In recent years, MEMS devices and systems have become more and more widely used in the fields of automobiles and consumer electronics, and the broad prospects of TSV through-silicon etch technology in the future packaging field, the application of dry plasma deep silicon etching technology More and more, it has gradually become one of the hottest processes in the field of MEMS processing and TSV technology. [0003] The above-mentioned dry etching equipment is generally integrated with a plasma system, including a plasma source system and a lower bias system. The plasma source is responsible for generating high-density plasma in the vacuum chamber, and the lower bias system gives direction to the ion movement of the plasma, and guides the charged particles to bombard the w...

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Problems solved by technology

With the demand for high etching rate, the plasma power density also increases. When the plasma is ignited, a large amount of heat is released, which makes the temperature in the chamber body rise sharply. However, after the igniting is completed, The temperature in the chamber body will drop rapidly, which will cause a large temperature difference in the chamber body, resulting in poor uniformity of each process and lower process yield

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