Process chambers and semiconductor processing equipment

Abstract

The invention discloses a process chamber and semiconductor processing equipment. It includes a chamber body and a cooling element sheathed on the outside of the chamber body, a cooling gas channel is formed between the cooling element and the outer peripheral wall of the chamber body, the process chamber also includes a temperature sensing element, A heating element and a control element, the temperature sensing element and the heating element are both electrically connected to the control element; wherein the temperature sensing element is used to detect the current actual temperature in the chamber body and send it to to the control element; the control element is used to compare the current actual temperature with a preset temperature, and when the current actual temperature is less than the preset temperature, control the heating element to the cavity The chamber itself is heated. It can effectively slow down the rate of temperature decrease in the chamber body, improve the uniformity of each process, increase the process yield, and reduce the production cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a process chamber and a semiconductor processing equipment. Background technique [0002] In recent years, MEMS devices and systems have become more and more widely used in automotive and consumer electronics, and TSV through-hole etching (Through-Silicon Etch) technology has broad prospects in the future packaging field. Dry plasma deep silicon etching process application More and more, it has gradually become one of the hottest processes in the field of MEMS processing and TSV technology. [0003] The above dry etching equipment is generally integrated with a plasma system, including a plasma source system and a lower bias voltage system. The plasma source is responsible for generating high-density plasma in the vacuum chamber, and the lower bias system orients the ion motion of the plasma and guides charged particles to bombard the wafer, resulting in phys...

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Problems solved by technology

With the demand for high etching rate, the plasma power density also increases. When the plasma is ignited, a large amount of heat is released, which makes the temperature in the chamber body rise sharply. However, after the igniting is completed, The temperature in the chamber body will drop rapidly, which will cause a large temperature difference in the chamber body, resulting in poor uniformity of each process and lower process yield

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