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Flexible quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as high surface relief and easy oxidation of copper nanometers, and achieve the effect of high surface relief

Inactive Publication Date: 2020-02-14
NANCHANG HANGKONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a flexible quantum dot light-emitting diode with copper nanowire transparent electrodes filled with PBO and its preparation method, which solves the problems of easy oxidation and high surface undulation of existing copper nanowires (CuNWs) as a transparent conductive layer

Method used

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  • Flexible quantum dot light emitting diode and preparation method thereof
  • Flexible quantum dot light emitting diode and preparation method thereof

Examples

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Embodiment 1

[0037] This embodiment provides a flexible quantum dot light-emitting diode, including a transparent substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron injection / transport layer, and a cathode that are sequentially stacked. The transparent substrate It is connected to the positive pole of the power supply, and the cathode is connected to the negative pole of the power supply; the thickness of the anode is 180nm; the thickness of the hole injection layer is 40nm; the thickness of the hole transport layer is 42nm; the quantum dots emit light The thickness of the layer is 25nm; the thickness of the electron injection transport layer is 50nm; the thickness of the cathode is 20nm.

[0038] Wherein, preferably, the transparent substrate is a polyethylene terephthalate film, the anode is copper / PBO, the hole injection layer is PEDOT:PSS, and the hole transport layer is polyethylene Carbazole; the quantum dot light-emit...

Embodiment 2

[0049] This embodiment provides a flexible quantum dot light-emitting diode, including a transparent substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron injection / transport layer, and a cathode that are sequentially stacked. The transparent substrate It is connected to the positive pole of the power supply, and the cathode is connected to the negative pole of the power supply; the thickness of the anode is 180nm; the thickness of the hole injection layer is 35nm; the thickness of the hole transport layer is 45nm; the quantum dots emit light The thickness of the layer is 20nm; the thickness of the electron injection transport layer is 60nm; the thickness of the cathode is 100nm.

[0050] Wherein, preferably, the transparent substrate is polyethylene naphthalate thin film; the anode is copper / PBO; the hole injection layer is PEDOT:PSS; the hole transport layer is polyethylene Vinyl carbazole; the quantum dot lumine...

Embodiment 3

[0053] This embodiment provides a flexible quantum dot light-emitting diode, including a transparent substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron injection / transport layer, and a cathode that are sequentially stacked. The transparent substrate It is connected to the positive pole of the power supply, and the cathode is connected to the negative pole of the power supply; the thickness of the anode is 180nm; the thickness of the hole injection layer is 45nm; the thickness of the hole transport layer is 40nm; the quantum dots emit light The thickness of the layer is 30nm; the thickness of the electron injection transport layer is 40nm; the thickness of the cathode is 150nm.

[0054] Wherein, preferably, the transparent substrate is a polyetherimide substrate film; the anode is copper / PBO; the hole injection layer is PEDOT:PSS; the hole transport layer is polyethylene carb azole; the quantum of the quantum dot...

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Abstract

The invention discloses a flexible quantum dot light emitting diode and belongs to the technical field of a light emitting diode. The diode comprises a transparent substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron injection / transport layer and a cathode which are sequentially stacked, wherein the transparent substrate is connectedwith a positive electrode of a power supply, a cathode is connected with a negative electrode of the power supply, thickness of the anode is 180 nm, thickness of the hole injection layer is 35-45nm, thickness of the hole transport layer is 40-45nm, thickness of the quantum dot light emitting layer is 20-30 nm, thickness of the electron injection transmission layer is 40-60nm, and thickness of thecathode ranges from 100 nm to 150 nm. The diode is advantaged in that PBO is used for packaging and protecting the copper nanowire network to serve as the flexible substrate, copper nanowires and a PBO / copper nanowire composite structure film are embedded in the flexible substrate, and defects that the copper nanowire flexible substrate is prone to oxidation and high in surface undulation degree are overcome.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a flexible quantum-dot light-emitting diode with copper nanowire transparent electrodes filled with PBO and a preparation method thereof. Background technique [0002] In future electronic products, all device components will be wirelessly connected to displays that serve as information input and / or output ports. Therefore, consumers' demand for information input / output functions of next-generation consumer electronics products will lead to an increasing demand for flexible and wearable displays. Among many next-generation light-emitting display devices, quantum dot light-emitting diodes (QLEDs) have unique advantages, such as wide color gamut, high purity, high brightness, low voltage, and extremely thin appearance. Flexible displays have received great attention due to their potential applications in mobile and wearable electronics, such as smartphones, automotiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/115H10K50/81H10K71/00
Inventor 张芹阳敏张余宝郝中骐黎芳芳
Owner NANCHANG HANGKONG UNIVERSITY
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