Manufacturing method of lead sulfide quantum dot, photoelectric detector and manufacturing method of photoelectric detector

A technology of photodetector and manufacturing method, which is applied in the field of photoelectric detection, can solve the problems of quantum dot agglomeration, unstable connection between short-chain ligands and lead sulfide, and hole collapse on the surface of quantum dot film, so as to achieve improved performance and excellent long-term effect Effects of temporal stability and good environmental stability

Inactive Publication Date: 2020-02-21
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Problems solved by technology

However, in the existing method of replacing long-chain ligands with short-chain ligands, the short-chain ligands exchanged by liquid ligands are unstable in connection with lead sulfide, which often makes quantum dots agglomerate; quantum dot films formed by solid-state ligand exchange There are voids and collapse defects on the surface

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  • Manufacturing method of lead sulfide quantum dot, photoelectric detector and manufacturing method of photoelectric detector
  • Manufacturing method of lead sulfide quantum dot, photoelectric detector and manufacturing method of photoelectric detector
  • Manufacturing method of lead sulfide quantum dot, photoelectric detector and manufacturing method of photoelectric detector

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Embodiment Construction

[0056] In order to make the purpose, advantages and characteristics of the present invention clearer, the following in conjunction with the attached Figure 1-10 The manufacturing method of the lead sulfide quantum dots proposed in the present invention, the photodetector and the manufacturing method thereof are further described in detail. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0057] An embodiment of the present invention provides a method for making lead sulfide quantum dots, see figure 1 , figure 1 It is a flowchart of a method for making lead sulfide quantum dots according to an embodiment of the present invention, and the method for making lead sulfide quantum dots includes:

[0058] Step S1, preparing a lead sulfide quantum dot solution coordinated by a long-chain ligand, where the long-cha...

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Abstract

The invention provides a manufacturing method of a lead sulfide quantum dot, a photoelectric detector and a manufacturing method of the photoelectric detector. A lead sulfide quantum dot solution coordinated by a long-chain ligand is mixed with a perovskite precursor solution, and the perovskite in the perovskite precursor solution is used as a short-chain ligand to replace the long-chain ligand in order to prepare a lead sulfide quantum dot coordinated by the short-chain ligand, so effective charge transmission and high carrier mobility between the lead sulfide quantum dots are realized, andthe lead sulfide quantum dots have good environmental stability; and the lead sulfide quantum dot coordinated by the short-chain ligand forms a quantum dot film on the surface of a photoelectric detector, so that the photoelectric detector has very high photoresponse characteristics under white light and infrared light, and has an excellent long-acting time stability in air.

Description

technical field [0001] The invention relates to the field of photoelectric detection, in particular to a method for manufacturing lead sulfide quantum dots, a photodetector and a method for manufacturing the same. Background technique [0002] Photodetectors have attracted a large number of researchers due to their wide-ranging applications in imaging, telecommunications, and biosensing. At present, photodetectors are usually based on silicon and epitaxially grown III-V semiconductors, but they have the disadvantages of high material and manufacturing costs; while quantum dot photodetectors (and other photodetectors based on nanostructures) are easily Several advantages of addressed processability, low-cost fabrication, tunable bandgap, and flexibility make them promising candidates for next-generation photodetectors. [0003] In particular, photodetector products based on sulfides (such as PbS) have attracted much attention. Among them, lead sulfide quantum dots (PbS QDs)...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/66B82Y20/00B82Y40/00H01L31/09H01L31/032H01L31/0352H01L31/18
CPCC09K11/025C09K11/661C09K11/665B82Y20/00B82Y40/00H01L31/09H01L31/0324H01L31/035218H01L31/18Y02B20/00Y02P70/50
Inventor 武青青朱建军胡少坚
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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