Method of film formation

Abstract

Semiconductor systems and methods are provided. In an embodiment, a method of film formation includes receiving a substrate, dispensing a priming material on the substrate, and applying an organometallic resist solution over the priming material on the substrate, thereby forming an organometallic resist layer over the priming material. The priming material includes water.

Description

technical field [0001] Embodiments of the present invention relate generally to forming integrated circuit devices, and more particularly to techniques for applying substrates and forming photoresist layers to compensate for variations in radiation intensity across the thickness of the photoresist layer. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. In the evolution of integrated circuits, functional density (eg, the number of interconnected devices per unit chip area) generally increases as geometry size (eg, the smallest component or circuit that can be produced by a fabrication process) shrinks. A shrinking process is often beneficial for increased throughput and lower associated costs. However, scaling has also increased the complexity in the formation and design of devices incorporating these integrated circuits. To achieve these advances, similar developments are required in semiconductor fabrication. [00...

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Problems solved by technology

However, shrinking dimensions also increase the complexity in the formation and design of devices incorporating these integrated circuits

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