Semiconductor manufacturing method
A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of fences and small holes, leakage, etc., and achieve the effect of preventing the defects of fences and small holes and reducing the impact
Pending Publication Date: 2020-02-28
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
This step of process development is the industry's most demanding process for equipment and the most precise process control. Due to the influence of the structure of NAND, the most complicated part of this process is to balance the etching process of each step, and at the same time let the etching stop on the tunneling oxide layer. In the prior art, the two most deadly problems of fence and small hole are prone to appear in the etching process, and finally the problem of electric leakage occurs
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0025] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be more apparent from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0026] Hereinafter, the terms "first", "second", etc. are used to distinguish between similar elements, and are not necessarily used to describe a specific order or chronological order. It is to be understood that these terms so used are interchangeable under appropriate circumstances. Similarly, if a method described herein includes a series of steps, the order in which these steps are presented is not necessarily the only order in which these steps can be performed, and some described steps may be omitted and / or...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a semiconductor manufacturing method, which comprises the steps of providing a substrate; forming a tunneling oxide layer on the substrate; etching the tunneling oxide layer andthe substrate to form a shallow trench isolation structure; forming a floating gate on the shallow trench isolation structure and the tunneling oxide layer; forming an ONO layer on the floating gate;etching the ONO layer by using acid; and forming a control gate on the remaining ONO layer. According to the semiconductor manufacturing method provided by the invention, a nitriding layer of the ONOlayer is easily removed in a wet etching mode by using acid, the influence caused by over-etching is reduced, the effect of cleaning the side wall of the ONO layer is achieved, and the defects of fences and small holes are prevented.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor manufacturing method. Background technique [0002] When the two-dimensional planar NAND flash memory enters the 20nm node, the etching process of the control gate and floating gate is the most complicated process in product development. This step will etch more than 10 layers of different f i lm combinations from top to bottom , while the two directions are different three-dimensional topography. This step of process development is the industry's most demanding process for equipment and the most precise process control. Due to the influence of the structure of NAND, the most complicated part of this process is to balance the etching process of each step, and at the same time let the etching stop on the tunneling oxide layer. In the prior art, the two most deadly problems, fences and pinholes, tend to occur during the etching process, and finally the probl...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L27/11524H01L21/28
CPCH01L29/401H10B41/35
Inventor 何理巨晓华王奇伟
Owner SHANGHAI HUALI MICROELECTRONICS CORP