Semiconductor device, pixel circuit, display panel and display device

Abstract

The present application provides a semiconductor device, a pixel circuit, a display panel and a display device. The semiconductor device includes N first thin film transistors, where N is a natural number greater than or equal to 2. The first thin film transistor includes a substrate, a first active layer, a first gate electrode, a first source electrode and a first drain electrode, the first active layer, the first gate electrode, the first The source electrode and the first drain electrode are formed on the substrate; the material of the first active layer is an oxide semiconductor material; the first gate electrode and the first active layer are insulated from each other, so The first source electrode and the first drain electrode are respectively electrically connected to the first active layer. The first source electrodes of the N first thin film transistors are electrically connected, and the first drain electrodes of the N first thin film transistors are electrically connected.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to a semiconductor device, a pixel circuit, a display panel and a display device. Background technique [0002] In recent years, display devices based on OLED (Organic Light Emitting Diode, Organic Light Emitting Diode) have become popular display products at home and abroad due to their advantages of self-luminescence, wide viewing angle, high luminous efficiency, wide color gamut, low operating voltage and thin panel. . [0003] The driving mode of the OLED display device is generally active driving, that is, the pixels of the display device are driven by the pixel circuit. A switching transistor in a general pixel circuit adopts an oxide semiconductor transistor. However, the active layer of the oxide semiconductor transistor is made of oxide semiconductor material, and the oxide semiconductor material has poor heat resistance, and oxygen in the active lay...

AI Technical Summary

Problems solved by technology

However, the active layer of the oxide semiconductor transistor is an oxide semiconductor material, and the heat resistance of the oxide semiconductor material is poor. Oxygen in the active layer is easy to escape at high temperature, causing the threshold voltage of the oxide semiconductor transistor to drift, which in turn leads to display The device fails, or the display is abnormal

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