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Terahertz quantum cascade laser device and manufacturing method thereof

A technology of quantum cascade and manufacturing method, applied in lasers, laser devices, phonon exciters, etc., can solve the problem of limited etching depth, and achieve the effect of improving the ratio of light output power

Inactive Publication Date: 2020-02-28
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The FIB etching and plasma etching methods used to fabricate the inclined end face of mid-infrared QCL are not suitable for THz QCL due to the limited etching depth.

Method used

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  • Terahertz quantum cascade laser device and manufacturing method thereof
  • Terahertz quantum cascade laser device and manufacturing method thereof

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Embodiment 1

[0037] An embodiment of the present specification provides a terahertz quantum cascade laser, which can realize different output powers of front and rear sections.

[0038] Specifically, such as figure 1 and figure 2 As shown, the laser includes a front end face 8 and a rear end face 7, wherein the rear end face 7 is perpendicular to the length direction of the ridge structure of the laser, and the front end face 8 is perpendicular to the length direction of the ridge structure. The surface forms an inclination angle of 9. Therefore, due to the non-parallel symmetry of the front and rear end faces, the two end faces have different reflectivity and transmittance, thereby forming different light output powers.

[0039] In some embodiments, the laser further includes a stacked semi-insulating substrate 1, a lower contact layer 2, a laser active region 4, an upper contact layer 5, and an upper surface metal layer 6, wherein the laser active region 4. The upper contact layer 5 a...

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PUM

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Abstract

The invention discloses a terahertz quantum cascade laser device and a manufacturing method thereof. The laser device is characterized in that a rear end face of the laser device is perpendicular to the length direction of a laser device ridge strip structure, an inclination angle is formed between the front end face and the vertical direction of the ridge strip structure, one end face is a cleavage face, and the other end face is a grinding and polishing face. The laser device is advantaged in that non-parallel end faces cause different reflectivity and transmissivity of the front end face and the rear end face, light emitting ratios of the front and rear end faces of the laser device are changed, when the inclination angle of the end surface is smaller than a total reflection critical angle of the active region of the laser device, a light emitting power ratio of the front end surface of the laser device is larger, and the inclined front end surface structure is further beneficial toinhibiting a transverse high-order mode and is suitable for wide-ridge strip, single-ended output and high-power laser devices.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a terahertz quantum cascade laser and a manufacturing method thereof. Background technique [0002] Terahertz (THz) waves (frequency range: 0.1-10THz) are electromagnetic waves between infrared light and microwaves, and have potential applications in national defense security, biomedicine, space and other fields. Due to the lack of efficient THz radiation sources and detectors, THz waves have not been fully understood, so it is called the THz gap. Terahertz radiation source devices mainly include electronic devices such as Gunn diodes, resonant tunneling diodes, and single-carrier photodiodes, as well as photonic devices such as lasers and optical parametric oscillators. In the frequency range of 1-5THz, THz quantum cascade laser (QCL), a photonic device based on semiconductor electrical pumping, has higher output power and efficiency than electronic devices, ...

Claims

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Application Information

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IPC IPC(8): H01S5/00H01S5/065H01S5/40
CPCH01S5/4018H01S5/0085H01S5/0653
Inventor 万文坚曹俊诚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI