Combined pulse high-power semiconductor laser therapeutic instrument driving device and system

Abstract

The invention discloses a combined pulse high-power semiconductor laser therapeutic instrument driving device and a system. The driving device comprises a pulse modulation circuit, an MOS tube, a feedback amplification circuit, a power supply Power, a laser diode and a current amplification circuit. Two input ends of the pulse modulation circuit are respectively connected with a time-base pulse Iand a time-base pulse II, and an output end of the pulse modulation circuit is connected with a grid electrode of the MOS tube; the in-phase input end of the current amplification circuit is connectedwith pulse current, the inverted input end is connected with the output end of the feedback amplification circuit, and the output end of the current amplification circuit is connected with the grid electrode of the MOS tube. The source electrode of the MOS tube passes through the polar region of a sampling resistor, the in-phase input end of the feedback amplifying circuit is connected with the source electrode of the MOS tube, and the inverting input end of the feedback amplifying circuit is grounded; the anode of the laser diode is connected with the power supply POWER, and the cathode of the laser diode is connected with the drain electrode of the MOS tube. The device has the characteristics of small volume, simple structure, reliable performance, quick pulse response, high pulse output power and strong anti-interference performance.

Description

technical field [0001] The invention relates to the field of semiconductor laser equipment, in particular to a driving device and system for a combined pulse high-power semiconductor laser therapeutic apparatus. Background technique [0002] At present, with the increasing clinical application of practical semiconductor laser equipment as physical therapy, high peak laser power has good penetration, and high peak power will also cause greater damage, and it needs to be treated in the surface layer. Lower peak power while requiring longer pulses. Moreover, in clinical practice, the situations described above will exist at the same time. Therefore, a semiconductor laser treatment device that can realize combined pulses is needed, which can realize superpulses and pulses combined. Contents of the invention [0003] In order to solve the above-mentioned technical problems, the present invention provides a driving device and system for a combined pulse high-power semiconductor...

AI Technical Summary

Problems solved by technology

[0002] At present, with the increasing clinical application of practical semiconductor laser equipment as physical therapy, the high peak laser power has good penetration, and at the same time, the high peak power will also cause greater damage, and it needs to be treated in the surface layer. Lower peak power while requiring long pulse duration

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