A driving device and system for combined pulsed high-power semiconductor laser therapeutic apparatus

Abstract

A driving device and system for a combined pulse high-power semiconductor laser therapeutic instrument, the driving device includes a pulse modulation circuit, a MOS tube, a feedback amplifier circuit, a power supply, a laser diode, and a laser amplifier circuit; the two input ends of the pulse modulation circuit are respectively connected to Time base pulse 1 and time base pulse 2, the output end is connected to the gate of the MOS tube; the non-inverting input end of the laser amplifier circuit is connected to the pulse current, the inverting input end is connected to the output end of the feedback amplifier circuit, and the output end of the laser amplifier circuit is connected to the MOS tube. The gate of the tube; the source of the MOS tube is connected to the polar ground of the sampling resistor, the same input terminal of the feedback amplifier circuit is connected to the source of the MOS tube, and the inverting input terminal is grounded; the positive pole of the laser diode is connected to the power supply POWER, and the negative pole is connected to the MOS tube. drain connection. The invention has the characteristics of small volume, simple structure, reliable performance, rapid pulse response, large pulse output power and strong anti-interference.

Description

technical field [0001] The invention relates to the field of semiconductor laser equipment, in particular to a driving device and system for a combined pulse high-power semiconductor laser therapeutic instrument. Background technique [0002] At present, with the increasing clinical application of practical semiconductor laser equipment as physical therapy, high peak laser power has good penetration, and high peak power will also cause greater damage, and it needs to be treated in the surface layer. Lower peak power while requiring longer pulses. Moreover, in clinical practice, the situations described above will exist at the same time. Therefore, a semiconductor laser treatment device that can realize combined pulses is needed, which can realize superpulses and pulses combined. Contents of the invention [0003] In order to solve the above-mentioned technical problems, the present invention provides a driving device and system for a combined pulse high-power semiconducto...

AI Technical Summary

Problems solved by technology

[0002] At present, with the increasing clinical application of practical semiconductor laser equipment as physical therapy, the high peak laser power has good penetration, and at the same time, the high peak power will also cause greater damage, and it needs to be treated in the surface layer. Lower peak power while requiring long pulse duration

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