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Tunable film bulk acoustic resonator

A thin-film bulk acoustic wave and resonator technology, applied in the field of resonators, can solve problems such as the impact of FBAR performance

Pending Publication Date: 2020-03-13
武汉敏声新技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when tuning with external components, the value of capacitance and inductance of the external components has a great influence on the performance of FBAR

Method used

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  • Tunable film bulk acoustic resonator
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  • Tunable film bulk acoustic resonator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048]As shown in FIG. 1( a ), it is a top view of a tunable thin-film bulk acoustic resonator in Embodiment 1, and FIG. 1( b ) is a schematic diagram of a three-dimensional structure. On the first substrate 101 (not shown in FIG. 1( b ), a resonator 103 including a first interdigitated structure 102 and a first middle region, the first interdigitated structure 102 and the first middle region resonator 103 are both It consists of a first upper electrode 104 , a first piezoelectric material 105 and a first lower electrode 106 . The resonator in the middle region of Embodiment 1 is a quadrilateral structure, and its four sides have corresponding interdigitated structures, and the interdigitated structures corresponding to each side have the same shape, the same number, and the same width, length, and spacing. The fingers corresponding to each side are perpendicular to the corresponding side of the resonator in the middle area. The ends of the finger structures are all straight l...

Embodiment 2

[0050] Fig. 2(a) is a top view of a tunable thin-film bulk acoustic resonator in Embodiment 2, and Fig. 2(b) is a schematic diagram of a three-dimensional structure. On the second substrate 201 (not shown in FIG. 2( b ), a resonator 203 including a second interdigitated structure 202 and a second middle region, the second interdigitated structure 202 and the second middle region resonator 203 are both It is composed of a second upper electrode 204 , a second piezoelectric material 205 and a second lower electrode 206 . The resonator in the middle area of ​​Embodiment 2 is a quadrilateral structure, and its four sides have corresponding interdigitated structures, and the interdigitated structures corresponding to each side have the same shape, the same number, and the same width, length, and spacing. The interdigitated structures corresponding to each side are not perpendicular to the corresponding side of the resonator in the middle region, but form a certain angle with the co...

Embodiment 3

[0052] FIG. 3( a ) is a top view of a tunable thin-film bulk acoustic resonator in Embodiment 3, and FIG. 3( b ) is a schematic diagram of a three-dimensional structure. On the third substrate 301 (not shown in FIG. 3( b ), a resonator 303 including a third interdigitated structure 302 and a third middle region, the third interdigitated structure 302 and the third middle region resonator 303 are both It is composed of a third upper electrode 304 , a third piezoelectric material 305 and a third lower electrode 306 . In Embodiment 3, the resonator in the middle area is a quadrilateral structure, and its four sides have corresponding interdigitated structures, and the interdigitated structures corresponding to each side have the same shape, the same number, and the same width, length, and spacing. The interdigital structure corresponding to each side is perpendicular to the corresponding side of the resonator in the middle region, the ends of the interdigital structure are arcs, ...

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Abstract

The invention relates to the technology of resonators, in particular to a tunable film bulk acoustic resonator, which comprises a resonator positioned in a middle area and an interdigital structure around the resonator. The interdigital structure around the resonator is arranged on one or more edges corresponding to the resonator. The interdigital structure is perpendicular to the corresponding side of the resonator or forms a certain angle with the corresponding side of the resonator. The tail end of the interdigital structure around the resonator is a straight line, or an arc line, or a mixed structure of the straight line and the arc line; the width, the length, the number and the spacing of the interdigital structure are adjustable. According to the resonator, the resonant frequency ofthe film bulk acoustic resonator can be adjusted under the condition that the thickness of each layer of material is not changed, and resonators with different working frequencies can be manufacturedon one wafer.

Description

technical field [0001] The invention belongs to the technical field of resonators, in particular to a tuneable film bulk acoustic wave resonator. Background technique [0002] With the ultra-high-speed development of wireless communication technology and the multi-functionalization of communication terminals, higher performance requirements are put forward for frequency devices working in the radio frequency band. The bandpass filters commonly used in radio frequency systems mainly include microwave dielectric ceramic filters and surface acoustic wave (SAW) filters. Although the performance of the dielectric ceramic filter is good, there are problems such as large volume and poor process compatibility, which limit its further development. Although the SAW filter has a high Q value and a relatively small geometric size, because the finger width and finger spacing of the interdigitated electrodes are inversely proportional to the operating frequency, the difficulty of the pho...

Claims

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Application Information

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IPC IPC(8): H03H9/02H03H9/15H03H9/17H03H9/13
Inventor 孙成亮高超邹杨蔡耀谢英周杰刘婕妤刘炎徐沁文
Owner 武汉敏声新技术有限公司
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