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Bulk acoustic wave resonator and manufacturing method thereof, filter and duplexer

A technology of bulk acoustic wave resonator and resonance area, which is applied in the field of wireless communication, can solve the problems of thin film deposition, etching precision limitation, difficulty in realizing thin film bulk acoustic wave duplexer, and inability to manufacture frequency difference resonators, etc.

Pending Publication Date: 2020-07-07
EPIC MEMS XIAMEN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] (2) Due to the limitation of thin film deposition and etching precision, resonators with small frequency differences cannot be produced, which limits the performance optimization design of thin film bulk acoustic wave filters and duplexers
[0007] (3) Difficult to realize on-chip integrated thin-film bulk acoustic wave duplexer

Method used

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  • Bulk acoustic wave resonator and manufacturing method thereof, filter and duplexer
  • Bulk acoustic wave resonator and manufacturing method thereof, filter and duplexer
  • Bulk acoustic wave resonator and manufacturing method thereof, filter and duplexer

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Embodiment Construction

[0054] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0055] The present disclosure proposes a three-dimensional (XYZ three-dimensional) mass loading structure for tuning the frequency of a thin film bulk acoustic resonator. The three-dimensional mass load structure described in the present disclosure includes:

[0056] a first part comprising one or more annular segments, the center of which coincides with the center of the effective resonance region of the bulk acoustic wave resonator;

[0057] a second portion comprising a plurality of strip segments radially distributed within and / or outside of said first portion; and

[0058] The third part is located on the first part and / or on the second part, and the third part is different from the first part and the second par...

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Abstract

The invention provides a bulk acoustic wave resonator, a manufacturing method thereof, a filter and a duplexer. The bulk acoustic wave resonator comprises a substrate, an acoustic reflection unit on the substrate, a piezoelectric stack structure on the acoustic reflection unit, and a welding pad on the piezoelectric stack structure, wherein the bulk acoustic wave resonator further comprises a three-dimensional mass load structure on the piezoelectric stack structure and / or in the piezoelectric stack structure. According to the bulk acoustic wave resonator, the manufacturing method thereof, thefilter and the duplexer, the process is simple, the cost is low, and performance optimization is facilitated.

Description

technical field [0001] The disclosure belongs to the technical field of wireless communication, and more specifically relates to a bulk acoustic wave resonator, a manufacturing method thereof, a filter, and a duplexer. Background technique [0002] With the development of mobile communication technology, the data transmission rate is required to be faster and faster, and there are more and more communication frequency bands. More and more filter devices are needed to ensure that the communication frequency bands do not interfere with each other. Mobile communication terminals, especially smart The number of filter components in mobile phones is increasing. [0003] At present, in smart phones, the filter device used in the middle and high frequency bands mainly adopts the film bulk acoustic wave technology (FilmBulk Acoustic Wave, BAW). Thin film bulk acoustic resonator is the basic unit of thin film bulk acoustic wave filter and duplexer. By cascading thin film bulk acoust...

Claims

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Application Information

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IPC IPC(8): H03H3/02H03H9/02H03H9/17H03H9/54H03H9/70
CPCH03H3/02H03H9/02015H03H9/171H03H9/54H03H9/706H03H2003/023H03H2009/02173
Inventor 李平王伟胡念楚贾斌
Owner EPIC MEMS XIAMEN CO LTD
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