8-12GHz high-power solid-state power amplifier assembly

Abstract

The invention discloses an 8-12GHz high-power solid-state power amplifier assembly. The top of an assembly cabinet body is provided with six paths of power divider assemblies. Six water cooling cabinsare fixed in the assembly cabinet body at intervals. One side of each water cooling cabin is provided with a water inlet joint and a water outlet joint, and one side of each water cooling cabin is provided with a solid-state power amplifier assembly. The 8-12GHz high-power solid-state power amplifier assembly provided by the invention has the advantages of independent assembly, disassembly and maintenance, weight reduction, strong backup capability, high reliability and the like while heat dissipation is satisfied.

Description

Technical field [0001] The invention relates to an 8-12 GHz high-power solid-state power amplifier component, which belongs to the technical field of radar simulators. Background technique [0002] In active array antennas, solid-state power amplifier components play a vital role. With the continuous improvement of GaN (Gallium Nitride) microwave power chip technology, the corresponding technical indicators are also developing in the direction of wider frequency bands, greater output power, and higher efficiency. However, due to the long-term blockade of high-power chip technology abroad, the current domestic power capacity, efficiency, and assembly process for X-band (8GHz~12GHz) power amplifier chips still have certain challenges. [0003] At the same time, the direct sintering of high-power chips on the shell can make the chips well grounded and improve the ability of chip heat dissipation. However, as the number of high-power chips on the component increases, the co-sintering ...

AI Technical Summary

Problems solved by technology

However, due to the long-term blockade of high-power chip technology in foreign countries, there are still challenges in the power capacity, efficiency, and assembly process of X-band (8GHz~12GHz) power amplifier chips in China.

[0003] At the same time, direct sintering of high-power chips to the housing can make the chips well grounded and improve the heat dissipation of the chips. However, with the increase in the number of high-power chips on the component, co-sintering of multiple chips not only requires a faster time to avoid solder aging, but also requires simultaneous assembly. The process requires the void rate to be as low as 10%, and even requires the void rate in the core area of ​​the chip to be within 4%. If there is a chip with an unqualified void rate or needs to be repaired, the component needs to be heated repeatedly, which will affect other non-faulty parts. The chip brings unnecessary damage, and the yield is difficult to control

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