8-12GHz high-power solid-state power amplifier assembly

A technology of power amplifier components and solid-state power amplifiers, which is applied to power amplifiers, parts of amplifying devices, amplifiers, etc., can solve the problems of chip damage and difficult to control yield, and achieve strong backup capability, high reliability, and satisfy heat dissipation. Effect

Pending Publication Date: 2020-03-24
NANJING CHANGFENG AEROSPACE ELECTRONICS SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the long-term blockade of high-power chip technology in foreign countries, there are still challenges in the power capacity, efficiency, and assembly process of X-band (8GHz~12GHz) power amplifier chips in China.
[0003] At the same time, direct sintering of high-power chips to the housing can make the chips well grounded and improve the heat dissipation of the chips. However, with the increase in the number of high-power chips on the component, co-sintering of

Method used

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  • 8-12GHz high-power solid-state power amplifier assembly
  • 8-12GHz high-power solid-state power amplifier assembly
  • 8-12GHz high-power solid-state power amplifier assembly

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Embodiment

[0044] Such as Picture 11 As shown, the housing of the solid-state power amplifier assembly is respectively arranged with the installation positions of each module, the front-end power amplifier installation point 11 is connected to a 0.25W power amplifier module, and the input terminal of the 0.25W power amplifier module is used as the input terminal of the solid-state power amplifier component; A first pad is connected to the power amplifier installation point 12, and an 8W power amplifier module is installed in the first assembly groove of the first pad; an isolator is connected to the isolator installation point 13; a groove is provided at the final power amplifier installation point 11 , A second pad is connected in the groove, a 40W power amplifier module is arranged on the second pad assembly boss; a feed circuit module is connected to the feed module installation point 14, and the input end of the feed circuit module is used to input DC Power supply, control signal, inp...

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Abstract

The invention discloses an 8-12GHz high-power solid-state power amplifier assembly. The top of an assembly cabinet body is provided with six paths of power divider assemblies. Six water cooling cabinsare fixed in the assembly cabinet body at intervals. One side of each water cooling cabin is provided with a water inlet joint and a water outlet joint, and one side of each water cooling cabin is provided with a solid-state power amplifier assembly. The 8-12GHz high-power solid-state power amplifier assembly provided by the invention has the advantages of independent assembly, disassembly and maintenance, weight reduction, strong backup capability, high reliability and the like while heat dissipation is satisfied.

Description

Technical field [0001] The invention relates to an 8-12 GHz high-power solid-state power amplifier component, which belongs to the technical field of radar simulators. Background technique [0002] In active array antennas, solid-state power amplifier components play a vital role. With the continuous improvement of GaN (Gallium Nitride) microwave power chip technology, the corresponding technical indicators are also developing in the direction of wider frequency bands, greater output power, and higher efficiency. However, due to the long-term blockade of high-power chip technology abroad, the current domestic power capacity, efficiency, and assembly process for X-band (8GHz~12GHz) power amplifier chips still have certain challenges. [0003] At the same time, the direct sintering of high-power chips on the shell can make the chips well grounded and improve the ability of chip heat dissipation. However, as the number of high-power chips on the component increases, the co-sintering ...

Claims

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Application Information

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IPC IPC(8): H03F1/00H03F3/21
CPCH03F1/00H03F3/211
Inventor 吕刚户国梁朱成林
Owner NANJING CHANGFENG AEROSPACE ELECTRONICS SCI & TECH
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