46results about How to "No added bulk" patented technology

The invention discloses a normal temperature bonding technology-based microminiature fuel cell encapsulation method, which belongs to the technical field of processing and systems of microfluids and micromachining. A polar plate surface after being processed by oxygen plasma is bonded to a flow field sealing washer of a micro-proton exchange membrane fuel cell (PEMFC) so as to realize ordered assembly of a cell component by bonding or using a solid adhesive tape. A boding interface between a silicon polar plate and the flow field sealing washer and an adhesive on the solid adhesive tape provide a pressure required for fastening the cell component. A layer of diaphragm seal is deposited on the surface of the cell body of the micro-PEMFC to realize complete sealing of the micro-PEMFC and achieve an effect on protecting the cell body. The method reduces moveable components in the cell body, reduces difficulties in encapsulation, avoids performance reduction of a proton exchange membrane because of the damage which is caused by high-temperature dehydration, avoids the pollution to MEA and other cell components, does not need to use a positioning clamp for clamping, does not increase cell device volume, and simultaneously ensures the reliability of a cell.

The invention discloses a balance antipodal Vivaldi antenna adopting unsymmetrical medium rejection and mixed grooving and relates to the field of antennas. While low cross polarization of a traditional balance antipodal Vivaldi antenna is kept as an advantage, the problem that due to asymmetry of the traditional balance antipodal Vivaldi antenna, a main lobe of the E face of the antenna deviates is solved. Each floor metal layer is attached to the lower surface of a medium substrate layer, a conductor metal layer is attached to the upper surface of the lower medium substrate layer, the conductor metal layer and the floor metal layers extend to the two sides respectively to form metal arms, the metal arms formed by the floor metal layers and the metal arm formed by the conductor metal layer are symmetrical in structure, the outer sides and the inner sides of the metal arms are of curve structures, the lower medium substrate layer located between the curve on the inner side of the conductor metal layer and the curve on the inner side of the lower floor metal layer is rejected, and the rejected lower medium substrate layer is provided with one more medium section compared with the curves on the inner sides of the floor metal layers. The balance antipodal Vivaldi antenna is used for working within the working frequency of 10-40 GHz.

The invention discloses an image acquisition method and an image acquisition device. The image acquisition method is applied to electronic equipment comprising M image acquisition units, which work cooperatively, M being an integer larger than or equal to 2. The image acquisition method comprises the following steps: when the M image acquisition units are in an on state, controlling the M image acquisition units to carry out non-synchronous focusing on a first image acquisition region in a non-synchronous focusing mode, in the non-synchronous focusing mode, the M focusing planes of the M image acquisition units at any moment in the focusing process being different; and when the first image acquisition unit of the M image acquisition units obtains at least one focusing point in the a first image acquisition region, obtaining a first image, collected through the first image acquisition unit, in the first image acquisition region, wherein the first image acquisition unit is any one image acquisition unit in the M image acquisition units.

A transmission transistor structure capable of enhancing signals output by a CMOS image sensor comprises a photodiode, a P-type silicon substrate, a drain terminal, an insulating layer, a polycrystalline silicon grid, a conductive channel and a heavily-doped region. The photodiode of a transmission transistor serves as a single photo-electric conversion diode and is responsible for converting optical signals to electric signals, and meanwhile, the photodiode of the transmission transistor also serves as the source end of the transmission transition responsible for electron transmission in the structure of the CMOS image sensor and is directly connected with the transmission transistor. The heavily-doped region with the junction depth being 0.12-0.18 micrometer is formed at the position, close to the polycrystalline silicon grid of the transmission transistor, of the photo diode through ion implantation, and the injected doping ion concentration is higher than the originally-injected doping ion concentration of the photodiode. According to the transmission transistor structure, when the CMOS image sensor outputs signals, the phenomenon that the conductive channel is pinched off too early can be avoided, photoelectrons are transmitted out as many as possible, and therefore the output strength of electric signals of the CMOS image sensor is enhanced.

The invention discloses a combined magnetic attracting type wireless charger. The problems that the thickness and size of the whole wireless charger are correspondingly increased and are inconvenientto carry due to the fact that only one group of charging coils for rapid charge or normal charge exists in the conventional wireless charger and the wireless charger only has the function of rapid charge or normal charge and a corresponding rapid charge component and coil are increased inside the wireless charger when the wireless charger needs to support the rapid charge function, and the existing wireless charger is adopted by virtue of electrification of the external USB (Universal Serial Bus) charge line and cannot completely get rid of the charge line and cannot be used at any time and any place can be solved. The wireless charger comprises a shell and a charging panel mounted in a middle part of the shell; a clamp sleeve is mounted on a side wall of the shell; a PLC (Programmable Logic Controller) is embedded on an outer wall of the top of the clamp sleeve; and one side of the PLC is provided with a storage battery embedded in the outer wall of the top of the clamp sleeve.

A heat dissipation structure of a semiconductor device and a preparation method thereof. The heat dissipation structure of a semiconductor device includes a composite casing and a heat pipe arranged in the composite casing. Integral structure, the transition material layer is formed by mutual diffusion of atoms in the heat-absorbing material layer and the heat-dissipating material layer, a device mounting part is provided on the surface of the composite shell on the side of the heat-absorbing material layer, and the bottom surface of the device mounting part is used for setting In the semiconductor device, a cavity for circulating cooling medium is formed in the heat dissipation material layer, the composite shell and the tube wall of the heat pipe are integrally structured, and the heat pipe is located on the side opposite to the bottom surface of the device mounting part and extends toward the cavity. The heat dissipation structure of the semiconductor device is an integrated structure, there is no contact interface with high thermal resistance, and various heat dissipation methods can quickly dissipate the heat generated by the semiconductor device without increasing the volume of the heat dissipation structure of the semiconductor device, which can meet the needs of miniaturized devices.