Method of Forming a Semiconductor Device

Abstract

A method of forming a semiconductor device includes depositing a second dielectric layer over a first dielectric layer, depositing a third dielectric layer over the second dielectric layer, patterninga plurality of first openings in the third dielectric layer, etching the second dielectric layer through the first openings to form second openings in the second dielectric layer, performing a plasmaetching process directed at the second dielectric layer from a first direction, the plasma etching process extending the second openings in the first direction, and etching the first dielectric layerthrough the second openings to form third openings in the first dielectric layer.

Description

technical field [0001] The present disclosure generally relates to methods of forming semiconductor devices. Background technique [0002] As the downscaling of semiconductor devices increases, various processing techniques (eg, photolithography) are adapted to allow fabrication of ever smaller sized devices. For example, as gate density increases, fabrication processes for various features in the device (eg, overlying interconnect features) are adapted to be compatible with scaling of device features as a whole. However, with the increasingly smaller process windows of semiconductor processes, the fabrication of these devices has approached or even exceeded the theoretical limits of lithographic equipment. As semiconductor devices continue to shrink, the required spacing (ie, pitch) between elements of the device is smaller than can be fabricated using conventional photomasks and lithographic equipment. Contents of the invention [0003] According to an embodiment of th...

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Problems solved by technology

However, with the increasingly smaller process windows of semiconductor processes, the fabrication of these devices has approached or even exceeded the theoretical limits of lithographic equipment.

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