GaN-based vertical device and fabrication method thereof

Abstract

The invention discloses a gallium nitride-based vertical device and a preparation method thereof. The device comprises: a gallium nitride compound buffer layer; a gallium nitride doped layer in contact with the gallium nitride compound buffer layer; a first electrode, set in contact with the gallium nitride doped layer; the second electrode, set in contact with the gallium nitride compound buffer layer; and the carrier plate; the passivation layer, set on the carrier plate; the carrier plate interconnection line, passing through the passivation layer, the interconnecting line of the carrier is connected to the first electrode and the carrier; the supporting layer is arranged on the passivation layer and has an opening structure, and the opening structure exposes the interconnecting line of the carrier in the passivation layer. The gallium nitride-based vertical device and its preparation method provided by the present invention are realized based on the fabrication of a heterogeneous epitaxial structure such as a sapphire substrate. During preparation, the sapphire substrate is peeled off by laser lift-off technology, combined with the front end and back end of semiconductor manufacturing The technology reduces the size of the gallium nitride-based vertical device, improves the heat dissipation efficiency of the device, and improves the manufacturing yield of the device.

Description

Technical field [0001] The present invention relates to a semiconductor device and a preparation range thereof, in particular, to a gallium nitride-based vertical device and a preparation method thereof. Background technique [0002] Gallium nitride (GaN) is a use of a co-strap compound semiconductor material, with high-strobing farm and electronic mobility, has a broad market in the field of LED lighting, and has a huge application in high-frequency communication and power conversion fields. prospect. Since GAN itself limits the physical properties of GaN, the growth of GaN-body single crystals is very difficult, so the current commercial GAN-based device is basically used to use heterogeneous epitaxial structures (such as sapphire, Si, SiC, etc.). [0003] Among them, the most commonly used heterogeneous structure is a sapphire substrate compatible with the GaN crystal structure. Since sapphire is an insulator, the resistivity at room temperature is large, resulting in the prod...

AI Technical Summary

Problems solved by technology

The technology of laser lift-off sapphire faces two main challenges: one is that the thermal expansion coefficient of the GaN compound buffer layer is different from that of sapphire, and the GaN compound buffer layer is usually thin (only a few μm or so), during the lift-off due to stress The epitaxial layer bends due to release; the other is that due to the tight combination of the sapphire substrate and the GaN compound buffer layer, it usually requires a larger laser energy to completely separate the interface, and a larger laser energy will cause the GaN compound The surface damage of the buffer layer is relatively large, which affects the performance of the device

Images