A Microwave Signal Vertical Interconnection Structure

Abstract

The invention discloses a microwave signal vertical interconnection structure, which belongs to the technical field of complex radio frequency microsystems, and solves the problems that the existing microstrip line and SIW have the same medium thickness, relatively large insertion loss and large radiation loss. The vertical interconnection structure of microwave signals includes multi-layer boards. The multi-layer boards include 8-layer metal plates stacked from top to bottom. V18 ground shielding holes are arranged on L1, and multiple V18 ground shielding holes form a rectangular cavity. The board is a left-right symmetrical rectangular structure, and the structure of the left area is as follows: the first microstrip line is provided on L1, and the first L1 pad is formed on L1 in the rectangular cavity; the first microstrip line and the surrounding area of ​​the first L1 pad Etch to form an insulating first area; etch to form the first L4 pad in the rectangular cavity, etch to form the first L5 pad; etch to form the first L5 pad; the first L1 pad is provided with a V14 signal hole, the first L5 A V58 grounding hole is provided on the pad, and V12 grounding holes are provided on both sides of the first microstrip line. The invention can be used to realize vertical interconnection of microwave signals.

Description

technical field [0001] The invention relates to the technical field of complex radio frequency microsystems, in particular to a microwave signal vertical interconnection structure. Background technique [0002] For complex RF microsystems, it often covers both active and passive systems, and involves microwave signal transfer between various planar circuits and non-planar circuits. The typical transfer is from microstrip lines to rectangular waveguides. Its structure Large size usually requires precise machining and assembly, which is not conducive to miniaturized integrated production. The proposal of Dielectric Integrated Waveguide (SIW) technology provides a solution for converting planar circuits to non-planar circuits. Usually, there are direct transition, gradient line transition, concave transition, and convex transition to realize the transfer of microwave signals from microstrip line to SIW. These transition methods are all single-layer transitions, that is, the di...

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Problems solved by technology

Usually, there are direct transition, gradient line transition, concave transition, and convex transition to realize the transfer of microwave signals from microstrip line to SIW. These transition methods are all single-layer transitions, that is, the dielectric thickness of microstrip line and SIW Similarly, the problem is that the insertion loss is large, the dielectric thickness is small, the conductor loss of SIW is large, the dielectric thickness is large, and the radiation loss of the microstrip line is large. It is difficult to realize an optimal microstrip line to SIW transfer interconnection scheme.

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