Bulk acoustic wave resonator, filter and electronic device

A bulk acoustic wave resonator and resonator technology, applied to electrical components, impedance networks, etc., can solve the problems of reduced Q value and large energy loss of resonators

Pending Publication Date: 2020-04-14
TIANJIN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, the energy loss is large, resulting in a decrease in the Q value of the resonator

Method used

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  • Bulk acoustic wave resonator, filter and electronic device
  • Bulk acoustic wave resonator, filter and electronic device
  • Bulk acoustic wave resonator, filter and electronic device

Examples

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Embodiment Construction

[0051] The technical solutions of the present invention will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, but should not be construed as a limitation of the present invention.

[0052]A bulk acoustic wave resonator according to the present invention will be described below with reference to the drawings. It should be pointed out that, in the embodiments of the present invention, although the thin film bulk acoustic resonator is used as an example for illustration, these descriptions can be applied to other types of bulk acoustic wave resonators.

[0053] figure 2 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.

[0054] figure 2 In the shown e...

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Abstract

The present invention relates to a bulk acoustic wave resonator, and the resonator comprises a substrate; an acoustic mirror; the bottom electrode is arranged above the substrate and is provided witha bottom electrode metal connecting layer; a top electrode facing the bottom electrode and having a top electrode metal connection layer; a piezoelectric layer which is arranged above the bottom electrode and between the bottom electrode and the top electrode, wherein an overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator forms an effective area of the resonator; and the top electrode metal connecting layer and the bottom electrode metal connecting layer are arranged around 50% or more of the peripheral length of the effective region in total. The invention further relates to a filter and an electronic device with the filter.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator, a filter with the resonator, and an electronic device with the filter. Background technique [0002] Film Bulk Acoustic Resonator (Film Bulk Acoustic Resonator, referred to as FBAR, also known as Bulk Acoustic Resonator, also known as BAW) as a MEMS chip plays an important role in the field of communication. Excellent characteristics such as high resonance frequency (GHz), high quality factor, large power capacity, and good roll-off effect are gradually replacing traditional surface acoustic wave (SAW) filters and ceramic filters. [0003] The structure of the traditional thin film bulk acoustic resonator is as follows: figure 1 shown. Among them, 10 is the bottom electrode of the resonator, which is connected to the two sides b and c of the pentagon of the resonator; 11 is the piezoelectric layer of the resonator, and 12 i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/17H03H9/02H03H9/54
CPCH03H9/171H03H9/02015H03H9/02047H03H9/02102H03H9/54H03H9/02118H03H9/132H03H9/02157H03H9/173H03H9/02125
Inventor 张孟伦庞慰杨清瑞
Owner TIANJIN UNIV
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