Method and device for estimating hot spot temperature of power semiconductor device
A power semiconductor, hot spot temperature technology, applied in thermometers, thermometer applications, measuring devices, etc., can solve the problems of power semiconductor device damage, inaccurate measurement, inapplicable monitoring of power semiconductor device hot spot temperature, etc., to reduce loss, high The effect of accuracy
Active Publication Date: 2021-08-17
SAIC MOTOR
View PDF6 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] Among them, the infrared thermal imaging method and the measurement method based on the contact temperature measurement chip need to measure the hot spot temperature of the power semiconductor device under the condition of opening the casing of the power semiconductor device, which may cause damage to the power semiconductor device and is not suitable for Real-time monitoring of hot spot temperature of power semiconductor devices in practical applications
However, the temperature model method based on power semiconductor device power loss, thermal resistance network, and coolant temperature uses the instantaneous junction temperature of the power semiconductor device as the monitoring temperature. The instantaneous junction temperature fluctuates greatly, which will cause the inverter The fluctuation of the fluctuation is repeatedly switched between "normal mode" and "derating control mode", which will affect the performance of the inverter; in addition, since the instantaneous junction temperature is obtained based on the product of instantaneous power and instantaneous thermal resistance, when When the cooling water channel of the inverter is blocked, the cooling water flow rate changes greatly, or the power semiconductor device is aging, the parameters of the thermal resistance network will change, which will affect the accuracy of the instantaneous junction temperature calculation of the power semiconductor device.
[0006] In summary, the existing methods for monitoring the hot spot temperature of power semiconductor devices have inaccurate measurement, and are not suitable for monitoring the hot spot temperature of power semiconductor devices in practical applications.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0046]In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0047] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present application and the above drawings are used to distinguish similar objects, and not necessarily Used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate circumstances such tha...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The embodiment of the present application discloses a method for estimating the hot spot temperature of a power semiconductor device, which calculates the average power loss of the power semiconductor device, and combines the average power loss based on the estimated thermal reference point cooling water temperature of the power semiconductor device and the measured thermal reference point cooling The water temperature is used to compensate the parameters of the thermal resistance network; then based on the parameter-compensated thermal resistance network, the average junction temperature of the power semiconductor device and the peak-to-peak value of the junction temperature fluctuation are calculated, and according to the calculated average junction temperature and junction temperature of the power semiconductor device Peak-to-peak fluctuations, estimating hotspot temperatures of power semiconductor devices. This ensures that the estimated change curve of the hot spot temperature is a smooth and continuous curve with less fluctuation, without the need for the inverter to switch repeatedly between the normal mode and the derating control mode, reducing the loss of the inverter; and in the power In the case of semiconductor device aging, cooling system parameter changes, etc., it can still ensure that the estimated hot spot temperature has a high accuracy.
Description
technical field [0001] The present application relates to the field of temperature estimation of power electronic devices, in particular to a method and device for estimating the temperature of hot spots of power semiconductor devices. Background technique [0002] With the continuous improvement of people's awareness of environmental protection, traditional products with low efficiency and high energy consumption have been gradually replaced by products based on frequency conversion technology. Nowadays, products based on frequency conversion technology have been widely used in various fields of daily life. [0003] The key to the realization of frequency conversion technology lies in power semiconductor devices. At present, power semiconductor devices are mainly developing in the direction of high power density and high utilization rate. This development trend requires high heat dissipation systems for power semiconductor devices. The main failure mode is thermal failure. ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): G01K13/00
CPCG01K13/00
Inventor 石绍磊张兴春韩永杰李峥唐自强
Owner SAIC MOTOR