Dry etching method

Abstract

The embodiment of the invention discloses a dry etching method. The dry etching method comprises the following steps: providing a wafer to be etched and placing the wafer in an etching machine; outputting process gas to the etching cavity from a central pipeline, and pressurizing the process gas under the power of the central power supply and the first radio frequency power so as to carry out first-step etching treatment; simultaneously outputting process gas by the central pipeline and the edge pipeline, pressurizing the process gas output by the central pipeline under the central power supply power and the second radio frequency power, and pressurizing the process gas output by the edge pipeline under the edge power supply power and the second radio frequency power so as to carry out second-step etching treatment, wherein the process gas comprises etching gas, the concentration of the etching gas in the second-step etching treatment is smaller than that of the etching gas in the first-step etching treatment, the edge power supply power is smaller than the central power supply power, and the second radio frequency power is larger than or equal to the first radio frequency power. According to the method, the morphology of each region of the etched wafer is relatively uniform.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor processing technologies, and in particular to a dry etching method. Background technique [0002] The dry etching process is often used in the field of wafer manufacturing or wafer advanced packaging. The dry etching gas reacts with the silicon on the back of the wafer to etch groove or hole structures. [0003] However, the existing dry etching process is usually formed in one step, and the gas in the central pipeline is used to perform rapid etching on the wafer to obtain the final etched shape. [0004] However, when the thickness of the silicon is larger, the uniformity of the etching morphology on the wafer surface is poorer, and the opening sizes in the center area and the edge area of ​​the wafer are inconsistent. Moreover, mass production cannot be stabilized by one-step etching. In case of load high temperature alarm. Contents of the invention [0005] An embodiment of the presen...

AI Technical Summary

Problems solved by technology

[0004]However, when the thickness of the silicon is larger, the uniformity of the etching morphology on the wafer surface is poorer, and the opening sizes of the central area and the edge area of ​​the wafer are inconsistent. Moreover, mass production cannot be stabilized by one-step etching, and the machine will generate a load high temperature alarm

Images