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A kind of preparation method of n-type passivated contact solar cell

A solar cell, N-type technology, applied in the field of solar cells, can solve problems affecting cell efficiency and yield, and achieve the effects of reducing damage, reducing production costs, and reducing process steps

Active Publication Date: 2021-09-07
江苏杰太光电技术有限公司
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  • Claims
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Problems solved by technology

The common method to prepare the n+ heavily doped polysilicon layer on the back surface is tubular high-temperature diffusion. This method cannot avoid spreading the dopant source to the front surface during diffusion, which will cause battery leakage and affect the efficiency and yield of the battery.

Method used

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Embodiment 1

[0042] A kind of preparation method of N-type passivation contact solar cell of the present invention, the technical scheme of its preparation comprises the following steps:

[0043] (1) Select an N-type crystalline silicon substrate 1, and perform polishing treatment on both sides of the N-type crystalline silicon substrate 1; wherein, the N-type crystalline silicon substrate 1 has a resistivity of 3Ω·cm and a thickness of 160 μm;

[0044] (2) On the N-type crystalline silicon substrate 1 treated in step (1), an ultra-thin tunneling oxide layer 5 is grown on its back surface; A layer of intrinsic amorphous silicon layer 61 containing a microcrystalline phase is deposited on the upper surface, and part of the amorphous silicon is wrapped around the front surface to form a polysilicon wrapped coating 11; wherein, the composition of the tunneling oxide layer 5 is silicon dioxide, and its preparation method is High-temperature thermal oxidation method, the thickness of the tunnel...

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Abstract

A method for preparing an N-type passivated contact solar cell of the present invention, which sequentially comprises polishing an N-type crystalline silicon substrate on both sides, growing a tunnel oxide layer, an intrinsic amorphous silicon layer, and an intrinsic amorphous silicon layer on the back in sequence Doping treatment, deposition of silicon nitride film on the back, texturing on the front surface, boron diffusion, removal of the borosilicate glass layer on the front and wrapping to the back, preparation of passivation anti-reflection film on the front, printing of silver paste on the back and printing of silver and aluminum on the front Paste and sintering steps to complete the preparation of N-type passivated contact solar cells. The invention solves the leakage problem caused by the phosphorus diffusion process in the conventional process, saves a step of activating the dopant source on the back side by high temperature annealing, reduces the damage to the silicon substrate, reduces the process steps, and reduces the production cost , and use plate type PECVD equipment to prepare silicon nitride passivation film to avoid poor appearance caused by texturizing the position of card groove printing when texturing the front side.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a preparation method of an N-type passivated contact solar cell. Background technique [0002] Solar cells are the basic devices that convert solar energy into electrical energy. With the continuous progress of solar cells, efficient cost reduction has become an important direction for the current industrialization of solar cells. High-efficiency structural design and improved manufacturing yield are the keys to achieve this goal. At present, in order to improve battery efficiency, a variety of battery structures have been developed, such as PERC, HIT, IBC, and TOPCon. Among them, TOPCon battery is a passivation contact battery. Its structure is to prepare an ultra-thin silicon oxide layer and high-doped Doped polysilicon layer, using the chemical passivation of silicon oxide and the field passivation of polysilicon layer can significantly reduce the recombination rate of mi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02167H01L31/1804H01L31/186H01L31/1864Y02E10/547Y02P70/50
Inventor 陈嘉马丽敏包杰林建伟
Owner 江苏杰太光电技术有限公司
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