Unlock instant, AI-driven research and patent intelligence for your innovation.

Band-gap reference circuit with low offset voltage and high power supply rejection ratio

A technology with high power supply rejection ratio and offset voltage, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems of limiting input voltage range, filter capacitor occupation, large chip area, etc., to improve power supply rejection ratio, Effect of reducing offset voltage and reducing influence

Active Publication Date: 2020-04-21
XIDIAN UNIV
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] (1) In the traditional bandgap reference voltage source, the operational amplifier is used to ensure that the voltages of M and N points are equal, and the offset voltage Vos of the operational amplifier A will seriously affect the accuracy of the bandgap reference voltage VBG;
[0009] (2) The offset voltage of the operational amplifier A also has a temperature coefficient, which will affect the temperature coefficient of the bandgap reference voltage VBG;
[0010] (3) In the traditional bandgap reference voltage source technology, the operational amplifier A is powered by the power supply voltage, the noise on the power supply will directly affect the accuracy of the bandgap reference voltage VBG, and it is difficult to achieve a high power supply rejection ratio;
The voltage cascading will limit the input voltage range, and the large filter capacitor on the chip will occupy a large chip area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Band-gap reference circuit with low offset voltage and high power supply rejection ratio
  • Band-gap reference circuit with low offset voltage and high power supply rejection ratio
  • Band-gap reference circuit with low offset voltage and high power supply rejection ratio

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Embodiments of the present invention will be further described below with reference to the accompanying drawings:

[0030] refer to figure 2 , the present invention includes: a voltage modulation unit 1, a bandgap core unit 2 and an operational amplifier unit 3; wherein the voltage modulation unit 1 is provided with two input terminals and an output terminal, wherein the first input terminal second clamping voltage VB, the second The two input ends are the bandgap reference voltage VBG, and the output end is the modulation voltage VREF, which supplies power for the bandgap core unit 2 and the operational amplifier unit 3 . The bandgap core unit 2 is provided with two input terminals and three output terminals, wherein the first input terminal is the modulation voltage VREF, the second input terminal is the bandgap reference voltage VBG, and the first output terminal is the first clamping voltage VA, The second output terminal is the second clamping voltage VB, and the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a band-gap reference circuit with a low offset voltage and high power supply rejection ratio. The band-gap reference circuit comprises a voltage modulation unit (1), a band-gapcore unit (2) and an operational amplifier unit (3). The voltage modulation unit shields a noise on a power supply VDD, generates a modulation voltage VREF to supply power to the band-gap core unit and the operational amplifier unit, and improves a power supply rejection ratio; the band-gap core unit generates a band-gap reference voltage VBG with a zero temperature coefficient; and the operational amplifier unit ensures that a first clamping voltage VA is equal to a second clamping voltage VB, and outputs a feedback voltage VF to the band-gap core unit to form a feedback loop so as to ensurestability of the band-gap reference voltage VBG. By adopting the voltage modulation unit, the power supply rejection ratio is effectively improved; and an offset voltage of the operational amplifierunit is small, and precision of the band-gap reference voltage is improved. The circuit has characteristics of the low offset voltage and the high power supply rejection ratio, and can be used for ananalog integrated circuit.

Description

technical field [0001] The invention belongs to the technical field of analog integrated circuits, and relates to a bandgap reference circuit with low offset voltage and high power supply rejection ratio. Background technique [0002] In the field of analog integrated circuit and mixed signal integrated circuit design, the reference voltage source is one of the important components. The reference voltage source is one of the core modules of the analog circuit. Its main function is to provide a reference voltage for other modules of the chip that does not vary with temperature and supply voltage. Its performance affects the performance of the entire chip. [0003] Traditional bandgap voltage references such as figure 1 As shown, the basic principle is to superimpose the voltage with positive temperature coefficient and the voltage with negative temperature coefficient with a certain coefficient to obtain a bandgap voltage with approximately zero temperature coefficient, and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
CPCG05F1/56
Inventor 来新泉陈廷奇孙昂勃蔚道嘉刘晨胡枭
Owner XIDIAN UNIV