Germanium-silicon photoelectric detector with high bandwidth and high responsivity

Abstract

The invention discloses a germanium-silicon photoelectric detector with high bandwidth and high responsivity, and relates to the technical field of photoelectric detection. The germanium-silicon photoelectric detector comprises a silicon waveguide, a silicon substrate, a lightly doped silicon region, a heavily doped silicon region, a germanium absorption region, an epitaxial silicon region, an epitaxial silicon doped region, a first electrode and a second electrode. The silicon waveguide is used for transmitting incident light; the silicon substrate is used for receiving the incident light propagated by the silicon waveguide; the lightly doped silicon region is arranged in the silicon substrate; the heavily doped silicon region is arranged in the lightly doped silicon region; the germaniumabsorption region is arranged on the lightly doped silicon region, the germanium absorption region comprises a first part far away from the silicon waveguide, and the projection surface of the firstpart on the lightly doped silicon region is arc-shaped; the epitaxial silicon region surrounds and covers the germanium absorption region; the epitaxial silicon doped region covers the top of the germanium absorption region; the first electrode is arranged on the heavily doped silicon region, and the shape of the first electrode is matched with that of the heavily doped silicon region; the secondelectrode is arranged on the epitaxial silicon doped region. The germanium-silicon photoelectric detector has high responsivity and relatively high bandwidth.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a germanium silicon photodetector with high bandwidth and high responsivity. Background technique [0002] Silicon-based photonic chips have the advantages of compatibility with standard semiconductor processes, low cost, and high integration, and are gradually being widely used in the industry. In the field of optical communication, the device usually used at the receiving end of silicon-based photons is a waveguide-type silicon-germanium photodetector. [0003] The current waveguide-type germanium-silicon photodetectors all adopt a square structure. The light is incident from one end and exits from the corresponding other end, and undergoes one-way absorption. germanium absorption region. However, a long absorption region will increase the parasitic parameters of the device, thereby reducing the optoelectronic bandwidth of the device. It can be seen from the ...

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However, a long absorption region will increase the parasitic parameters of the device, thereby reducing the optoelectronic bandwidth of the device

It can be seen from t

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