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A flexible film with adjustable infrared emissivity and its preparation method

A technology of infrared emissivity and flexible film, which is applied in diffusing elements, instruments, optics, etc., can solve the problems of inability to meet the application of special-shaped structures, deposition of flexible films, limited area size, etc., to increase the change value of infrared emissivity , The effect of high preparation efficiency and unlimited area size

Active Publication Date: 2022-01-28
HARBIN INST OF TECH
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention will solve existing method to improve based on VO 2 The emissivity change value of the intelligent thermal control device requires a high-precision vacuum coating system and a micro-nano structure processing system. The cost is high, the preparation efficiency is low, the area size is limited, and the preparation temperature is high, so it is difficult to deposit a flexible film on a flexible substrate. , can not meet the problem of special-shaped structure application, but provide a flexible film with adjustable infrared emissivity and its preparation method

Method used

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  • A flexible film with adjustable infrared emissivity and its preparation method

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specific Embodiment approach 1

[0025] Specific implementation mode one: combine figure 1 Specifically, in this embodiment, a flexible film with adjustable infrared emissivity is sequentially composed of a highly reflective metal base layer, VO 2 Composition of composite layer and surface protection layer;

[0026] The VO 2 The composite layer consists of an infrared transparent matrix material and multiple micron-scale W-doped VO 2 Particle composition, micron-scale W-doped VO 2 The particles are distributed inside the infrared transparent matrix material; the micron-scale W-doped VO 2 The maximum size of the particles is 1 μm to 10 μm; the micron-scale W-doped VO 2 The mass ratio of the particles to the infrared transparent matrix material is (0.5-5):100; the micron-scale W-doped VO 2 W in the particle accounts for 0%-2.5% of the total atomic number of W and V.

[0027] The beneficial effects of this embodiment are:

[0028] (1) The present invention adopts a "bottom-up" method, specifically micron-...

specific Embodiment approach 2

[0032] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the highly reflective metal base layer is Al, Au, Ag, Mg, Ni, Zn or Cu; the surface protection layer is Al 2 o 3 , SiO 2 , ZrO 2 , Nb 2 o 5 , HfO 2 or TiO2 ; The infrared transparent base material is high-density polyethylene or hydrogenated styrene-butadiene block copolymer. Others are the same as in the first embodiment.

[0033] In this specific embodiment, the hydrogenated styrene-butadiene block copolymer is SEBS, and the high-density polyethylene is HDPE.

specific Embodiment approach 3

[0034] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that: the thickness of the highly reflective metal base layer is 100nm-500nm; the thickness of the surface protection layer is 50nm-200nm; VO 2 The thickness of the composite layer is 200 μm to 500 μm. Others are the same as in the first or second embodiment.

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Abstract

A flexible film with adjustable infrared emissivity and a preparation method thereof belong to the field of intelligent thermal control. The present invention seeks to improve the existing method based on VO 2 The emissivity change value of the intelligent thermal control device requires a high-precision vacuum coating system and a micro-nano structure processing system. The cost is high, the preparation efficiency is low, the area size is limited, and the preparation temperature is high, and it is difficult to deposit flexible thin films on flexible substrates. , can not meet the problem of special-shaped structure application. A flexible film with adjustable infrared emissivity is composed of a highly reflective metal base layer, VO 2 It is composed of composite layer and surface protection layer. Preparation method: 1. Micron-scale W-doped VO 2 Preparation of particles; 2. VO 2 Preparation of composite layer film; 3. Deposition of high-reflection metal base layer; 4. Deposition of surface protective layer. The invention is used for a flexible film with adjustable infrared emissivity and its preparation.

Description

technical field [0001] The invention belongs to the field of intelligent thermal control. Background technique [0002] VO 2 It is a thermochromic material with high transmittance in the low-temperature infrared band and high reflection in the high-temperature infrared band. It is very suitable as a variable infrared emissivity device. Generally, the VO 2 The thin film is deposited on a highly reflective substrate in the infrared band, and it transmits VO at low temperature 2 The infrared light of the film is reflected by the substrate, and the device has a low emissivity; at high temperature, the infrared light cannot pass through VO 2 film, due to VO 2 The reflection of the thin film is lower than that of the highly reflective substrate, and the emissivity of the device becomes larger, which is very suitable for intelligent thermal control. However, since VO 2 The reflection of the film at high temperature is higher, resulting in a VO-based 2 The high-temperature em...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/00G02B5/02
CPCG02B5/008G02B5/0242G02B5/0268
Inventor 豆书亮李垚李晓白赵九蓬范青潽任飞飞谷金鑫魏航
Owner HARBIN INST OF TECH
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