GOA circuit, display panel and threshold voltage compensation method of thin film transistor

Abstract

The invention provides a GOA circuit, a display panel and a threshold voltage compensation method of a thin film transistor. The GOA circuit only comprises five TFTs, and can achieve the ultra-narrowframe of the display panel. Moreover, a double-gate structure is adopted as a first thin film transistor (T1), so a threshold voltage (Vth) in the GOA circuit is not only controlled by a top gate (thetop gate is connected with a node in the GOA), and is also controlled by a bottom gate (an adjustable voltage source (VLS)); specifically, the Vth of the TFT is integrally negative, the voltage of the bottom gate can be adjusted to be negative, and if the Vth of the TFT is positively biased, the voltage of the bottom gate can be adjusted to be negative, so the GOA circuit is more stable, and theservice life of the GOA circuit is prolonged. And electric leakage of the first node (Q) can be reduced, so the GOA circuit can output an ultra-wide pulse signal.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a threshold voltage compensation method for a GOA circuit, a display panel and a thin film transistor. Background technique [0002] At present, the driving of the horizontal scanning lines of the active-matrix organic light-emitting diode (AMOLED) display panel is realized by an external integrated circuit, which can control the step-by-step opening of the scanning lines of each row , and using the GOA (Gate Driver on Array) method, the row scanning driving circuit can be integrated on the display panel substrate, which can reduce the number of external ICs, thereby reducing the production cost of the display panel, and can realize the narrow frame of the display device . Oxide thin film transistors have high mobility and good device stability, and are currently widely used in GOA circuits. [0003] In the manufacturing process of oxide thin film transistor (TFT), t...

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Problems solved by technology

[0003] In the manufacturing process of oxide thin film transistor (TFT), the process fluctuation will affect the uniformity of the threshold voltage of the whole panel. In addition, the oxide thin film transistor is disturbed by external conditions such as electricity, light and temperature variation, and the threshold voltage of the device is prone to deviation. shift

Based on the above factors, in order to ensure that the GOA circuit can work normally under the premise of uneven or variable threshold voltage, a lot of sub-circuits need to be set in the GOA circuit, so the design of each level of GOA is more complicated, and the number of TFTs is large, which is not conducive to the display panel. Narrow bezel, not in line with the original intention of narrow bezel design

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