Solid-state imaging element and electronic device
An imaging device and solid-state technology, which is applied in the field of solid-state imaging devices and electronic equipment, can solve problems such as reducing the resolution of analog-to-digital conversion units, and achieve the effect of shortening the 1AD time and shortening the reading time
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Embodiment 1
[0135] Embodiment 1 is an embodiment in which the sample hold unit 15 includes four capacitors for holding pixel signals. In Example 1, similar to Image 6 In the case of the shown circuit configuration, an N-type MOS input source-grounded operational amplifier is used as the inverting amplifier 141 of the column amplifier unit 14, and a single-slope type AD converter is used as the AD converter 161 of the AD conversion unit 16 . For example, the sample hold unit 15 includes a set of a plurality of sample hold circuits 151 provided for each pixel column. Furthermore, the sample hold circuits 151 provided for each pixel column each have four capacitors for holding pixel signals. Figure 8 The configuration of one pixel column of the CMOS image sensor according to the embodiment is illustrated.
[0136] Such as Figure 8 As shown, the sample-and-hold circuit 151 provided for each pixel column includes a total of four capacitors C s_P_odd 、C s_D_odd 、C s_P_even and C s_D_...
Embodiment 2
[0152] Embodiment 2 is a modified example of Embodiment 1, and is an example in which the inverting amplifier 141 includes a P-type MOS input-source-grounded operational amplifier. Figure 10 The configuration of one pixel column of the CMOS image sensor according to Embodiment 2 is illustrated.
[0153] The inverting amplifier 141 of the column amplifier unit 14 can take various forms. In Embodiment 1, an N-type MOS input source grounded operational amplifier is used as the inverting amplifier 141 . On the other hand, in Embodiment 2, a P-type MOS input source-grounded operational amplifier is used as the inverting amplifier 141 . In this way, even in the case of using a P-type MOS input-source grounded operational amplifier as the inverting amplifier 141, the same operation and effect as Embodiment 1 using an N-type MOS input-source grounded operational amplifier can be obtained.
Embodiment 3
[0155] Embodiment 3 is a modified example of Embodiment 1, and is an example in which the input of the inverting amplifier 141 is used as the input of the level determination circuit 142 . Figure 11 The configuration of one pixel column of the CMOS image sensor according to Embodiment 3 is illustrated.
[0156] In Embodiment 1, the output of the inverting amplifier 141 (ie, the output of the column amplifier unit 14 ) is used as the input of the level determination circuit 142 . On the other hand, in Embodiment 3, the input of the inverting amplifier 141 (ie, the input of the column amplifier unit 14 ) is used as the input of the level determination circuit 142 . In this way, even in the case where the input of the inverting amplifier 141 is used as the input of the level determination circuit 142, the same operations and effects as in Embodiment 1 can be obtained. The technique of Embodiment 3 can also be applied to Embodiment 2.
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