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AlGaN barrier layer in AlGaN/GaN HEMT and growth method of AlGaN barrier layer

A growth method and barrier layer technology, which is applied in the field of AlGaN/GaN HEMT epitaxial structure and its growth, can solve the problem of increasing Al component segregation of AlGaN barrier layer lattice defects, AlGaN barrier layer cannot grow at high temperature, Al atoms and Ga Insufficient atomic surface mobility and other problems, to achieve the effect of improving the two-dimensional electron gas surface density, avoiding lattice defects and Al component segregation, and ensuring reliability

Pending Publication Date: 2020-05-05
LATTICE POWER (JIANGXI) CORP
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Problems solved by technology

However, in the HEMT epitaxy process, in order to prevent the GaN channel from being destroyed, the AlGaN barrier layer cannot be grown at high temperature, resulting in insufficient surface mobility of Al atoms and Ga atoms
In this case, TMAl, TMGa and SiH 4 Passing into the reaction chamber will further reduce the surface mobility of Al atoms and Ga atoms, increase the lattice defects of the AlGaN barrier layer and cause Al component segregation

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  • AlGaN barrier layer in AlGaN/GaN HEMT and growth method of AlGaN barrier layer

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[0020] In order to more clearly illustrate the implementation cases of the present invention or the technical solutions in the prior art, the specific implementation manners of the present invention will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention, and those skilled in the art can obtain other accompanying drawings based on these drawings and obtain other implementations.

[0021] When performing n-type doping on the AlGaN barrier layer in the prior art, TMAl, TMGa and SiH 4 The problem of reducing the surface mobility of Al atoms and Ga atoms, increasing the lattice defects of the AlGaN barrier layer, and causing the segregation of Al components easily caused by entering the reaction chamber, the present invention proposes a new AlGaN / GaN HEMT The AlGaN barrier layer includes: a non-doped first AlGaN layer, a periodic silicon-doped second A...

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Abstract

The invention provides an AlGaN barrier layer in an AlGaN / GaN HEMT and a growth method of the AlGaN barrier layer. The AlGaN barrier layer in the AlGaN / GaN HEMT comprises a non-doped first AlGaN layer, a periodic silicon doped second AlGaN layer and a non-doped third AlGaN layer. The second AlGaN layer is composed of a multi-period non-doped AlGaN layer and a silicon-doped AlGaN layer. The AlGaN barrier layer can effectively avoid lattice defects and Al component segregation caused by SiH4 doping while improving the surface density of two-dimensional electron gas, and ensures the mobility of the two-dimensional electron gas and the reliability of the HEMT device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an AlGaN / GaN HEMT epitaxial structure and a growth method thereof. Background technique [0002] In the AlGaN / GaN HEMT structure, the surface density of the two-dimensional electron gas is an important factor affecting the device characteristics such as saturation current, transconductance, and on-state resistance. Although thickening the AlGaN barrier layer and increasing the Al composition in the AlGaN barrier layer can increase the surface density of the two-dimensional electron gas, when the thickness of the AlGaN barrier layer and the Al composition in it exceed a certain range, the AlGaN potential The barrier layer will relax, which will reduce the gas surface density of two-dimensional electrons, and will generate crystal defects at the AlGaN / GaN interface, thereby reducing the mobility of two-dimensional electron gas and damaging the dynamic characteristics and rel...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06H01L29/20H01L29/205H01L21/335
CPCH01L29/7786H01L29/0684H01L29/205H01L29/2003H01L29/66462
Inventor 付羿周名兵
Owner LATTICE POWER (JIANGXI) CORP
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