31results about How to "Avoid Lattice Defects" patented technology

The invention relates to semiconductor technology, aims to overcome the difficulty of manufacturing a semiconductor power device with a trench / gate super-junction, and provides a method for manufacturing a longitudinal power semiconductor device. The technical scheme of the invention is as follows: firstly a first semiconductor region is formed by epitaxial process; a first oxide layer and a deposited mask layer are formed at the top of the first semiconductor region, the photoetching operation is performed, a first trench is formed by etching, a second oxide layer is formed on the two side walls of the first trench, the second oxide layer is removed by wet-etching, a third oxide layer is formed on the inner wall of the trench, a second semiconductor region is formed on the two side walls of the first trench, the third oxide layer is removed, a fourth oxide layer is formed, insulation dielectrics are packed and then planarization is carried out, a body region is formed, a second trench is formed on the body region by etching, a trench gate is made, and finally a source region and a body contact region are formed, followed by electrode preparation and surface passivation. The method has the benefits of having low process difficulty and being applied to MOS-controlled longitudinal devices.

The invention relates to a method for preparing high saturation magnetisation CoFe alloy powder by using hydrotalcite as a single precursor, which belongs to the technical field of a metal soft magnetThe invention relates to a method for preparing high saturation magnetisation CoFe alloy powder by using hydrotalcite as a single precursor, which belongs to the technical field of a metal soft magnetic material. The CoFe alloy powder can be prepared by calcining hydrotalcite precursor with the general chemical formula of Co1-bFeb(OH)2R<n->b / n.nH2O for 3 to 6 hours under the condition of 673-1073Kic material. The CoFe alloy powder can be prepared by calcining hydrotalcite precursor with the general chemical formula of Co1-bFeb(OH)2R<n->b / n.nH2O for 3 to 6 hours under the condition of 673-1073K in the environment with the ratio of H2 to N2 being 4-8 percent, wherein b in the Co1-bFeb(OH)2R<n->b / n.nH2O is b is more than or equal to 0.25 and is less than or equal to 0.5. Compared with the priin the environment with the ratio of H2 to N2 being 4-8 percent, wherein b in the Co1-bFeb(OH)2R<n->b / n.nH2O is b is more than or equal to 0.25 and is less than or equal to 0.5. Compared with the prior art, the invention has the advantages that the prepared CoFe alloy powder does not need to be ground in a ball milling mode, has the grain diameter of 20-150 nanometers, and accurate chemical propoor art, the invention has the advantages that the prepared CoFe alloy powder does not need to be ground in a ball milling mode, has the grain diameter of 20-150 nanometers, and accurate chemical proportion and complete grain structure, avoids the diversification of metal sources and lattice defect caused by powerful grinding and has superior magnetic property.rtion and complete grain structure, avoids the diversification of metal sources and lattice defect caused by powerful grinding and has superior magnetic property.

The invention discloses a deposition and doping device for the absorbing layer of a thin film solar cell, which includes a deposition chamber, a first supply mechanism, a second supply mechanism and an evaporation heating mechanism. The source material transported in the chamber, the deposition heating element used to heat the source material into the source material vapor is arranged on the deposition chamber, the second supply mechanism transports the dopant material to the evaporation heating mechanism to be heated into the dopant material vapor, and the dopant material vapor The vapor pipe is transported into the deposition chamber, and the vapor pipe is provided with a third switch, and the source material vapor and the dopant material vapor are output from the deposition chamber to be deposited on the substrate. The present invention integrates deposition and doping, can carry out deposition of source materials, and can also carry out diffusion doping. distribution, to ensure that the absorbing layer of thin film solar cells has good and stable performance.

The invention relates to a preparation method of an electrode material for a supercapacitor and the electrode material prepared by the method, which comprises the following steps: (a) drying the crop straw at 100-150°C to remove moisture, and then placing it under airtight conditions to raise the temperature Calcining at 200-350°C for 0.5-5 hours to obtain a pre-carbonized product; (b) taking the pre-carbonized product and adding it to a mixed solution of ferric chloride and sodium chloride, soaking it for 10-20 hours, and drying it at 80-150°C , then placed in an inert gas atmosphere and calcined at 700-1500°C for 1-5 hours, and naturally cooled to obtain a carbonized product. The concentration of the ferric chloride is 5-10g / 100ml, and the concentration of the sodium chloride is 10-20g / 100 m; (c) Wash the carbonized product several times with dilute hydrochloric acid with a concentration of 0.5-2 mol / L, filter the filter residue, rinse the filter residue several times with deionized water, and dry it. Fe3+ can form a stable complex with the oxygen-containing functional groups on the surface of the pre-carbonized product, avoiding the formation of a large number of lattice defects in the calcined carbon material, and is conducive to the construction of a 3D microporous structure.

The invention relates to a ZnO / CdTe / CdS nanometer cable array electrode used for a solar battery and a preparation method thereof. The ZnO / CdTe / CdS nanometer cable array electrode is composed of an ITO conductive glass substrate, a ZnO buffering thin layer, a ZnO nanometer line array layer, a CdTe nanometer cable layer and a CdS nanometer crystal protective layer which are arranged from inside to outside; and the saturation photocurrent density of the ZnO / CdTe / CdS nanometer cable array electrode is improved to 12.4 mA / cm<2> through a CdS and CdTe sensitization technology. The ZnO / CdTe / CdS nanometer cable array electrode provided by the invention has the advantages of simple and practicable preparation process, low cost, high productive rate and good market application prospect.