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ZnO/CdTe/CdS nanometer cable array electrode and preparation method thereof

A technology of nano-cables and array electrodes, which is applied in the manufacture of circuits, electrical components, and final products, and can solve problems such as difficult control and repetition, easy to be corroded, and limited range of absorption spectrum

Inactive Publication Date: 2013-10-23
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Firstly, the range of the absorption spectrum is limited; secondly, when the electrode is in contact with the electrolyte for a long time, it is easy to be corroded, and the chemical and electrical stability are poor; finally, the preparation process is complicated and difficult to control and repeat

Method used

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  • ZnO/CdTe/CdS nanometer cable array electrode and preparation method thereof
  • ZnO/CdTe/CdS nanometer cable array electrode and preparation method thereof
  • ZnO/CdTe/CdS nanometer cable array electrode and preparation method thereof

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Effect test

Embodiment 1

[0133] Embodiment 1: Preparation of ZnO / CdTe / CdS nano-cable array electrode

[0134] The preparation steps are as follows:

[0135] A. Surface pretreatment of ITO conductive glass

[0136] The surface of ITO conductive glass is ultrasonically cleaned with deionized water, acetone, alcohol and deionized water in sequence, then dried with a hair dryer, and immediately transferred to the RF magnetron sputtering coating machine produced by Chengdu Qixing Vacuum Coating Technology Co., Ltd. , at a vacuum of 10 -3 Protected under the condition of Pa;

[0137] B. Preparation of ZnO buffer film

[0138] The clean ITO conductive glass obtained in step A) is placed in the radio frequency magnetron sputtering coating machine, and the ITO glass is used as the anode substrate to sputter the cathode ZnO target material for 30 minutes at a heating temperature of 300° C. and a vacuum degree of 0.1 Pa. grow a layer of ZnO buffer film layer;

[0139] C. Preparation of ZnO nanowire arrays ...

Embodiment 2

[0156] Embodiment 2: Preparation of ZnO / CdTe / CdS nano-cable array electrode

[0157] The preparation steps are as follows:

[0158] A. Surface pretreatment of ITO conductive glass

[0159] The surface of ITO conductive glass is ultrasonically cleaned with deionized water, acetone, alcohol and deionized water in sequence, then dried with a hair dryer, and immediately transferred to the RF magnetron sputtering coating machine produced by Chengdu Qixing Vacuum Coating Technology Co., Ltd. , at a vacuum of 10 -4 Protected under the condition of Pa;

[0160] B. Preparation of ZnO buffer film

[0161] Place the clean ITO conductive glass obtained in step A) in the radio frequency magnetron sputtering coater, and use the ITO glass as the anode substrate to sputter the cathode ZnO target material for 24 minutes at a heating temperature of 360°C and a vacuum degree of 10Pa to grow One layer of ZnO buffer film layer;

[0162] C. Preparation of ZnO nanowire arrays

[0163] Weigh 0....

Embodiment 3

[0179] Embodiment 3: the preparation of ZnO / CdTe / CdS nano cable array electrode

[0180] The preparation steps are as follows:

[0181]A. Surface pretreatment of ITO conductive glass

[0182] The surface of ITO conductive glass is ultrasonically cleaned with deionized water, acetone, alcohol and deionized water in sequence, then dried with a hair dryer, and immediately transferred to the RF magnetron sputtering coating machine produced by Chengdu Qixing Vacuum Coating Technology Co., Ltd. , at a vacuum of 10 -5 Protected under the condition of Pa;

[0183] B. Preparation of ZnO buffer film

[0184] Put the clean ITO conductive glass obtained in step A) in the radio frequency magnetron sputtering coater, and use the ITO glass as the anode substrate to sputter the cathode ZnO target for 30 minutes under the conditions of heating temperature 340°C and vacuum degree 6Pa, and grow One layer of ZnO buffer film layer;

[0185] C. Preparation of ZnO nanowire arrays

[0186] Diss...

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Abstract

The invention relates to a ZnO / CdTe / CdS nanometer cable array electrode used for a solar battery and a preparation method thereof. The ZnO / CdTe / CdS nanometer cable array electrode is composed of an ITO conductive glass substrate, a ZnO buffering thin layer, a ZnO nanometer line array layer, a CdTe nanometer cable layer and a CdS nanometer crystal protective layer which are arranged from inside to outside; and the saturation photocurrent density of the ZnO / CdTe / CdS nanometer cable array electrode is improved to 12.4 mA / cm<2> through a CdS and CdTe sensitization technology. The ZnO / CdTe / CdS nanometer cable array electrode provided by the invention has the advantages of simple and practicable preparation process, low cost, high productive rate and good market application prospect.

Description

【Technical field】 [0001] The invention belongs to the technical field of semiconductor nanometer materials. More specifically, the present invention relates to a ZnO / CdTe / CdS nano-cable array electrode for solar cells, and also relates to a preparation method of the ZnO / CdTe / CdS nano-cable array electrode. 【Background technique】 [0002] In recent years, due to the advantages of semiconductor quantum dots or nanocrystals with high absorption efficiency, adjustable band gap, high resistance to photodegradation, and multi-exciton generation effects, one-dimensional array electrodes can effectively reduce electron scattering and electron transport paths. To improve the electron diffusion length and photovoltaic path, researchers gradually use quantum dots or nanocrystals to sensitize one-dimensional oxide nanoarray electrodes to prepare semiconductor-sensitized solar cells (SSSC for short). In the SSSC structure, since ZnO and TiO 2 The band gap is wide, the transmittance to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCY02P70/50
Inventor 王浩刘荣王淑嫱王喜娜王甜汪宝元
Owner HUBEI UNIV
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